Photoluminescence investigations of ZnO micro/nanostructures

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

“…The nanowire (NW) configuration in semiconductor systems such as oxides, nitrides, and arsenides is highly promising for the next generation nanoscale photonic, optoelectronic and photovoltaic devices thanks to the characteristic large area to volume ratio [1][2][3]. In particular, for light-emitting devices, it was demonstrated that group III-nitride (III-N) NWs can achieve higher light extraction compared to their 2D counterparts [4,5].…”

Flexible ZnO-mAb nanoplatforms for selective peripheral blood mononuclear cell immobilization

“…The emission peaks in the visible region at 415 nm can be tentatively attributed to the electron transitions from interstitial zinc (Zn i ) related defect levels to valence band 40 . The origin of the DLE band is still a matter of discussion that derives from the fact that it depends on several factors, such as crystal perfection, doping, impurity availability, and surface morphology 41 , 42 . Moreover, recent reports showed that different areas of ZnO structures may contribute differently to the PL spectra.…”

ZnAl2O4 decorated Al-doped ZnO tetrapodal 3D networks: microstructure, Raman and detailed temperature dependent photoluminescence analysis

“…Due to their importance in several technological elds, namely photocatalysis, gas and bio-sensing applications, functionalised zinc oxide (ZnO) micro-and nanostructures constitute an important topic in current worldwide research. [1][2][3][4][5][6][7][8][9][10][11][12][13] The disrupted lattice periodicity at ZnO micro-and nanosurfaces is known to cause an increase in the surface state density, which constitutes the main driving paths of sensing-based applications. 3,[14][15][16][17][18][19] Doping effects, thermal treatments under different atmospheres and coverage of as-grown micro-and nano-ZnO surfaces with continuous dielectric media are known to result in strong modications in the electronic energy levels inside the bandgap and band structure of the semiconductor oxide, with a notable inuence on the optical and electrical material response.…”

“…Low temperature PL measurements are of extreme relevance in characterisation of semiconductor materials, allowing, for instance, assessment of excitonic features, which are known to dissociate near room temperature (RT) in a wide number of semiconductors, as well as investigation of defects related to radiative processes, carrier transport dynamics and localised states in semiconductor materials. 5,36 These phenomena usually play an important role in the optical and electrical performance of the nal devices; thus an adequate understanding of their behaviour is mandatory. In the case of ZnO, it is well established that high quality bulk materials usually exhibit well-resolved free (FX) and donor-bound (D 0 X) exciton recombination lines located in the high-energy spectral range, near the band edge (NBE) of the material bandgap.…”

“…In the case of ZnO, it is well established that high quality bulk materials usually exhibit well-resolved free (FX) and donor-bound (D 0 X) exciton recombination lines located in the high-energy spectral range, near the band edge (NBE) of the material bandgap. 5,23,25,[37][38][39] Additionally, depending on the growth/synthesis method, visible deep level recombination broad bands in the green, yellow, orange and red spectral regions are commonly identied. 24,[40][41][42][43][44][45][46][47] Moreover, for Al-doped ZnO it is well recognised that a neutral donor-bound exciton is responsible for the observed I 6 luminescence transition at ca.…”