Photoluminescence of As2S3 doped by Cr and Yb

Stronski, A.

doi:10.15407/spqeo17.04.341

Cited by 7 publications

(2 citation statements)

References 7 publications

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“…This is an expected result in the light of the larger polarizability of Se regarding the one for S atoms. However, non‐linear dependences have been found in the dispersion energy E d , and similar deviations from the additivity of mole volumes have also been reported for different physical properties within this compositional line 54–56.…”

Section: The Conformation Of As–s–se Ternary Glass Alloyssupporting

confidence: 76%

The Wemple–DiDomenico model as a tool to probe the building blocks conforming a glass

González-Leal

2013

Physica Status Solidi (b)

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The low‐frequency optical dielectric response of glasses is discussed regarding its sensitivity to the presence of building blocks conforming their structure. The model suggested by Wemple and DiDomenico to describe the dispersion of the refractive index of solids is further developed in terms of the cation local bonding environment and its effect in the value of the dispersion energy. As40S60−xSex glass alloys have been studied under these considerations and quantitative estimates of the concentration of building blocks are reported. Results are consistent with Raman experiments.

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Section: The Conformation Of As–s–se Ternary Glass Alloyssupporting

confidence: 76%

The Wemple–DiDomenico model as a tool to probe the building blocks conforming a glass

González-Leal

2013

Physica Status Solidi (b)

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“…This is due to the fact that light soaking of film causes the stabilization of structure in amorphous chalcogenide material by redistributing the chemical bonds of the nearest environment. 19 For amorphous As 2 S 8 film, its structure is described as a mixture of AsS 3 pyramids and S-S chains. This structure changes are mainly due to changes between S-S bonds in different environments.…”

Section: A Temperature Dependence Of Dark Conductivity and Photocondmentioning

confidence: 99%

Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation

Zou

Shen

et al. 2013

AIP Advances

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The photoconductivity of amorphous As 2 S 8 chalcogenide film under the irradiation of bandgap light is investigated. In the temperature range 300-350 K, the dark conductivity and photoconductivity of the annealed As 2 S 8 film increase with the temperature, and the dependence of the both on temperature shows that the conduction in As 2 S 8 film is an activated process having single activation energy. Under the irradiation of bandgap light, the photocurrents of the annealed and illuminated As 2 S 8 film increase with the irradiation intensity, and their difference indicates the existence of the light-soaked effect. Meanwhile, the photoconductivity degradation during the irradiation and the photocurrent decay after stopping the irradiation are observed. By adding the irradiation of the sub-bandgap light, the enhancement of photoinduced voltage occurs. C 2013 Author(s)

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Influence of Modification on the Structure and Physical Properties of Arsenic Trisulfide. A Short Review

Paiuk

2018

NATO Science for Peace and Security Series B: Physics and Biophysics

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Photoluminescence of As2S3 doped by Cr and Yb

Cited by 7 publications

References 7 publications

The Wemple–DiDomenico model as a tool to probe the building blocks conforming a glass

The Wemple–DiDomenico model as a tool to probe the building blocks conforming a glass

Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation

Influence of Modification on the Structure and Physical Properties of Arsenic Trisulfide. A Short Review

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