Photoluminescence of CdS:Cu doped by diffusion

Ralph, J. E.

doi:10.1002/pssa.2210530226

Cited by 9 publications

(2 citation statements)

References 15 publications

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“…The 0.95, 1.06, and 1.35 eV emissions are attributed to the PL from the CdS layer; the exact origin of these three emissions has not yet been determined. Cu-related emission was reported to appear around 1.77 eV, 18) the peak of which is apparently different from the peaks of the present three bands. Hereafter we refer to these emissions as the ''1.35 eV band''.…”

Section: Pl Spectra Under Selective Excitationcontrasting

confidence: 73%

Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se₂ Solar Cells

Yoshida

Tajima

Kawakita

et al. 2008

jjap

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We investigated proton irradiation effects on Cu(In,Ga)Se 2 (CIGS) solar cells with a structure of ZnO/CdS/CIGS using photoluminescence (PL) spectroscopy. After proton irradiation, near band-edge emission from the CIGS layer was considerably reduced, while deep-level emission emerged at 0.8 eV. Subsequent annealing restored the intensity of the near band-edge emission slightly, and reduced the 0.8 eV band substantially. An anomalous spectral variation caused by the annealing suggests that the 0.8 eV band does not originate from a single irradiation-induced defect. After the irradiation, the 1.35 eV emission from the CdS layer was moderately reduced, and the band-edge emission from the ZnO layer had disappeared. These bands recovered to the initial state after the annealing. Qualitative correlation was observed between the PL properties and the electrical properties of the cell.

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Section: Pl Spectra Under Selective Excitationcontrasting

confidence: 73%

Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se₂ Solar Cells

Yoshida

Tajima

Kawakita

et al. 2008

jjap

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“…Treating the NWs with sodium sulfide depressed the FET electron currents for both gold and indium contact devices [Supporting Information Figure S3(D, H), cyan]. This is expected, since both selenium , and sulfur − act as acceptors in CdSe and CdS, respectively. The use of sodium sulfide will be explored in more detail in the following section.…”

Section: Resultsmentioning

confidence: 85%

Solution-Based Stoichiometric Control over Charge Transport in Nanocrystalline CdSe Devices

et al. 2013

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Using colloidal CdSe nanowire (NW) field-effect transistors (FETs), we demonstrated the dependence of carrier transport on surface stoichiometry by chemically manipulating the atomic composition of the NW surface. A mild, room-temperature, wet-chemical process was devised to introduce cadmium, selenium, or sulfur adatoms at the surface of the NWs in completed devices. Changes in surface composition were tested for by energy dispersive spectroscopy and inductively coupled plasma-atomic emission spectroscopy and through the use of the vibrational reporter thiocyanate. We found that treatment with cadmium acetate enhances electron currents, while treatment with sodium selenide or sodium sulfide suppressed them. The efficacy of doping CdSe NWs through subsequent thermal diffusion of indium was highly dependent on the surface composition. While selenium-enriched CdSe NW FETs were characterized by little to no electron currents, when combined with indium, they yielded semimetallic devices. Sulfur-enriched, indium-doped devices also displayed dramatically enhanced electron currents, but to a lesser extent than selenium and formed FETs with desirable ION/IOFF >10(6). The atomic specificity of the electronic behavior with different surface chalcogens suggested indium was bound to chalcogens at the NW surface, indicating commonalities with and implications for indium-containing CdSe nanocrystal films. Low temperature measurements of indium-doped CdSe NW FETs showed no evidence of impurity scattering, further supporting the existence of an indium-chalcogen interaction at the surface rather than in the core of the NW.

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Cadmium sulfide (CdS) ionization and excitation energies of impurities and defects

Landolt-Börnstein - Group III Condensed Matter

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Photoluminescence of CdS:Cu doped by diffusion

Cited by 9 publications

References 15 publications

Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se₂ Solar Cells

Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se₂ Solar Cells

Solution-Based Stoichiometric Control over Charge Transport in Nanocrystalline CdSe Devices

Cadmium sulfide (CdS) ionization and excitation energies of impurities and defects

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Photoluminescence of CdS:Cu doped by diffusion

Cited by 9 publications

References 15 publications

Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se2 Solar Cells

Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se2 Solar Cells

Solution-Based Stoichiometric Control over Charge Transport in Nanocrystalline CdSe Devices

Cadmium sulfide (CdS) ionization and excitation energies of impurities and defects

Contact Info

Product

Resources

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Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se₂ Solar Cells

Photoluminescence Analysis of Proton Irradiation Effects in Cu(In,Ga)Se₂ Solar Cells