Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods

Abstract

Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS2 grown by CVT and THM, respectively

Structural and optical analysis of single phase CuInS2 nanocrystals for solar cell applications

“…11,12) But the practical conversion efficiency of CuInS 2 thin film solar cells in the laboratory experiments limited to 20%, due to its limited light collection and various recombination losses. 13,14) Several methods have been reported to synthesize CuInS 2 crystals such as the travelling heater method (THM), 15) chemical vapour transport (CVT), 16) hot-press (HP) method, 17) solid state reaction of metal powders, 18) microwave combustion method, 19) colloidal synthesis, 20) hydrothermal, 21) and solvo thermal methods. 12) Onish et al 22) studied the various defect states of CuInS 2 crystals grown by travelling heater method and investigated the defect-related emissions in photoluminescence spectra.…”