INTRODUCTIONThe ZnO (wurtzite) is a wide bandgap (3.437 eV at 2 K), naturally n-type semiconductor with a large exciton-binding energy of 60 meV that has attracted much recent attention. The recently reported ability to obtain p-type ZnO 1-5 opens up novel possibilities for optoelectronic light-emitting devices, including lasers operating in the near ultraviolet (UV) and blue spectral range. The low-temperature photoluminescence (PL) emission is dominated by the neutral donor-bound exciton (D°,X) complexes 6 and the green band near 2.4 eV. 7 The mechanism of the green emission is not still completely understood. In the literature are several models relating the green luminescence to transitions between energy levels of interstitial Zn or O vacancy to Zn vacancy. The two different shallow donors, acceptor phonon-assisted recombination is the most probable model. 7 The red and yellow low-intensity luminescence from ZnO is also reported, which are related to impurities. 8 The ZnO can be grown as a large-scale, high-quality bulk and thin-film crystals and possesses a potential as a host for rare-earth (RE) ions doping. When excited by proper radiation, hot carriers-impact excitation, or carriers injected in the p-n junction structure, this material has the potential to display luminescence over wavelengths from UV to infrared and can have applications in electroluminescence (EL) and cathodoluminescence (CL) displays and other optoelectronics devices. However, up to now, the research showed that the main obstacle of ZnO host doped with RE ions is relatively poor luminescence from RE centers compared to that from excitonic emission or self-activated (SA) host centers. In the past, most extensively studied was luminescence of trivalent RE 3ϩ ions from sintered ZnO-polycrystalline pellets. 9-18 It was found that the addition of various coactivators mainly lithium ions, 10-17 nitrogen, 18 or chlorine 15-17 compounds usually results in an increase of the luminescence intensity of RE 3ϩ ions and a decrease of the intrinsic luminescence of the semiconductor host.In this article, we present results of a spectroscopic study on luminescence of RE 3ϩ ions embedded into ZnO bulk and thin-film single-crystal semiconductor hosts. To our knowledge, this is the first report of the visible emission of RE ions Pr 3ϩ , Sm 3ϩ , Dy 3ϩ , Ho 3ϩ , and Tm 3ϩ incorporated into ZnO single crystal. We also study the sintered polycrystallineZnO:RE pellets, co-doped with Li, Cl, and N ions.
EXPERIMENTThe ZnO material used in this investigation was undoped 10 mm ϫ 10 mm ϫ 0.5-mm melt-grown crystals by Cermet, Inc., Atlanta, GA and ϳ0.5-mthick epilayer thin-film samples grown on a 1-in.-diameter sapphire (0001) substrate by S & R Rubicon, Inc., Chicago IL. The ZnO single crystals and thinfilm samples are oriented with the c axis perpendicuWe report the results of a cathodoluminescence (CL) and photoluminescence (PL) study of ZnO-bulk single crystals and epilayer thin-film samples grown on a sapphire (0001) substrate and doped by implantation with ra...