2007
DOI: 10.1016/j.jlumin.2007.01.024
|View full text |Cite
|
Sign up to set email alerts
|

Photoluminescence of hexagonal boron nitride: Effect of surface oxidation under UV-laser irradiation

Abstract: We report on the UV laser-induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence bands are tentatively ascribed to impurity and mono (V N ) or multiple (m-V N with m ¼ 2 or 3) nitrogen vacancies. A structured fluorescence band between 300 and 350 nm is assigned to impurity-band transition and its complex lineshape is attributed to phonon replicas. An additional band at 34… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

8
89
0

Year Published

2007
2007
2024
2024

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 88 publications
(97 citation statements)
references
References 41 publications
8
89
0
Order By: Relevance
“…In agreement with our earlier studies of nanosecond laser irradiation [17][18], the surface darkening is assigned to elementary boron. Amorphous boron a-B is known to exhibit broadband Raman spectra situated in the low-frequency range below 1200 cm -1 [19].…”
Section: Raman Analysissupporting
confidence: 92%
See 1 more Smart Citation
“…In agreement with our earlier studies of nanosecond laser irradiation [17][18], the surface darkening is assigned to elementary boron. Amorphous boron a-B is known to exhibit broadband Raman spectra situated in the low-frequency range below 1200 cm -1 [19].…”
Section: Raman Analysissupporting
confidence: 92%
“…On the other hand, the lower-energy bands above 4.09 eV belong to impurity and defect absorption. The structured fluorescence band between 300 nm and 350 nm (F) may be assigned to carbon impurities and nitrogen vacancies and its complex lineshape is explained by phonon replica [18]. Earlier, it has been suggested of using the 4.0-eV fluorescence as a measure of the sample purity.…”
Section: Luminescence Analysismentioning
confidence: 99%
“…Luminescence properties of high purity commercially available hBN microcrystal powders have been largely studied in cathodoluminescence [2][3][4][5] and photoluminescence [6][7][8][9][10][11][12][13][14] experiments. Due to the synthesis methods used, these powders are inherently contaminated by carbon, calcium and oxygen impurities.…”
Section: Therefore It Is Of Interest To Analyze and Compare Luminescmentioning
confidence: 99%
“…These potential dosimetric signals are caused by processes with participating of different lattice defects of intrinsic and extrinsic genesis. At present it is established that many features in the behavior of hexagonal and cubic boron nitrides exposed to radiation are dictated by the complexes based on nitrogen vacancies with substitutional oxygen atoms and carbonic impurities (Kubota et al, 2007;Museur et al, 2007;Trinkler et al, 2004). In addition, defects of synthesis or radiation origin have similar spectral parameters and are to be taken into account while analyzing induced luminescence processes.…”
Section: Introductionmentioning
confidence: 99%