Photoluminescence of langasite thin films prepared from sol–gel process

Hu, Yi; Wang, Feng‐Wei; Lin, Hsin-Fu

doi:10.1016/j.matchemphys.2007.06.044

Cited by 11 publications

(7 citation statements)

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“…Как было упомянуто во введении, ранее проводились единичные исследования люминесцентных свойств LGS, однако, результаты, представленные в работах [24,[27][28][29], сильно отличаются (см. таблицу).…”

Section: расчет структуры энергетических зон La 3 Ga 5 Sio14unclassified

“…Причина наблюдаемых отличий может быть объяснена с использованием результатов, полученных в настоящей работе. В работах [24,28,29] результаты были получены при комнатной температуре. Как показано в настоящей работе, люминесценция LGS испытывает сильное температурное тушение при 300 K. Кроме того, в случае энергий возбуждения, соответствующих области прозрачности кристалла [28,29], возбуждаются только центры люминесценции, относящиеся к дефектам.…”

Section: расчет структуры энергетических зон La 3 Ga 5 Sio14unclassified

“…По данным, представленным в литературе, люминесцентные свойства нелегированных кристаллов исследованы слабо, при этом данные по положению полос свечения и их количеству противоречивы и не воспроизводятся из статьи в статью (см. таблицу) [24,[27][28][29].…”

Section: Introductionunclassified

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Люминесцентные Свойства Нелегированных Кристаллов Лангасита

Спасский¹,

Козлова²,

Козлова³

et al. 2019

Физика Твердого Тела

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The optical and luminescence properties of La_3Ga_5SiO_14 lanthanum–gallium silicate crystals grown in atmospheres of argon and argon with the addition of oxygen are investigated. The results of calculations of the structure of energy bands are presented, obtained using the CASTEP module in the framework of the generalized gradient approximation and the local density approximation. The width of the optical band gap of the crystal is determined to be $$E_{g}^{{{\text{opt}}}}$$ = 5.1 eV. Upon interband excitation, La_3Ga_5SiO_14 crystals grown in argon atmosphere show a luminescence band with a maximum at 430 nm, whereas for a crystal grown in argon with addition of oxygen, two luminescence bands with maxima at 470 and 530 nm dominate in the luminescence spectrum. The nature of the luminescence centers responsible for these bands is discussed with the help of the data for electronic structure calculations. The effect of temperature on the luminescent properties of La_3Ga_5SiO_14 is demonstrated. The presence of traps in La_3Ga_5SiO_14 is shown using thermally stimulated luminescence, and their activation energy is determined.

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Section: расчет структуры энергетических зон La 3 Ga 5 Sio14unclassified

Section: Introductionunclassified

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Люминесцентные Свойства Нелегированных Кристаллов Лангасита

Спасский¹,

Козлова²,

Козлова³

et al. 2019

Физика Твердого Тела

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“…Amongst these techniques, sol-gel spin-coating is attractive due to its low cost, low temperature operation and environmental friendliness. [2][3][4] Moreover, sol-gel spincoating has been widely used in the development of optical materials for optoelectronic devices because it is easily controlled by varying some the growth parameters such as the spin speed, the viscosity of the solution and the annealing temperature.…”

Section: Introductionmentioning

confidence: 99%

Luminescence of (Mg,Zn)Al₂O₄:Tb mixed spinel thin films prepared by spin-coating

2015

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MgAl 2 O 4 and ZnAl 2 O 4 both have the spinel structure and similar lattice constants, but the bandgap of MgAl 2 O 4 is about double that of ZnAl 2 O 4 , making it interesting to consider the mixed spinel (Mg x Zn 1-x )Al 2 O 4 as a possible host for luminescent ions. Prior to preparing thin films, the Mg:Zn ratio and Tb concentration were optimized for green luminescence from the 5 D 4 -7 F 5 transition of Tb 3+ ions using nanocrystalline samples prepared by combustion synthesis. Thin films with x = 0.75 and 0.5 mol% Tb were spin-coated on Si(100) substrates using a solution of the nitrates of Mg, Zn, Al and Tb in ethanol, with ethylene glycol as complexing agent. Samples about 200 nm thick were obtained by sequentially depositing 10 layers at 3000 rpm for 30 s. Samples were annealed for 1 h in air before measuring their luminescence properties. For the sample annealed at 600 °C, x-ray diffraction showed the thin film had a strong (111) preferential orientation. Atomic force microscopy revealed a root means square roughness of 1 nm and Auger electron spectroscopy depth profiles showed a uniform layer with a sharp interface at the Si substrate. With an increase in annealing temperature up to 1000 °C, the luminescence increased while the surface became slightly rougher and the layer-substrate interface more interdiffused. Annealing the samples at 1200 °C resulted in diffusion of Si through the layer and the formation of an additional phase. While the green Tb emission was slightly reduced, blue emission from the 5 D 3 level of Tb 3+ was greatly enhanced in these samples.

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“…The transmissivity is very high in 250 or more [3]. Photoluminescence spectra of LGS single crystal (at 8 K) or LGS film on the Si board were measured to investigate the origin of each emission peak [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Optical and scintillation properties of Ca3NbGa3Si2O14 single crystal grown by micro-pulling down method

Futami

Yokota

Sato

et al. 2012

Journal of Crystal Growth

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Photoluminescence of langasite thin films prepared from sol–gel process

Cited by 11 publications

References 11 publications

Люминесцентные Свойства Нелегированных Кристаллов Лангасита

Люминесцентные Свойства Нелегированных Кристаллов Лангасита

Luminescence of (Mg,Zn)Al₂O₄:Tb mixed spinel thin films prepared by spin-coating

Optical and scintillation properties of Ca3NbGa3Si2O14 single crystal grown by micro-pulling down method

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Photoluminescence of langasite thin films prepared from sol–gel process

Cited by 11 publications

References 11 publications

Люминесцентные Свойства Нелегированных Кристаллов Лангасита

Люминесцентные Свойства Нелегированных Кристаллов Лангасита

Luminescence of (Mg,Zn)Al2O4:Tb mixed spinel thin films prepared by spin-coating

Optical and scintillation properties of Ca3NbGa3Si2O14 single crystal grown by micro-pulling down method

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Product

Resources

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Luminescence of (Mg,Zn)Al₂O₄:Tb mixed spinel thin films prepared by spin-coating