Photoluminescence of Nd-doped SnO2 thin films

Rinnert, H.; Miska, Patrice; Vergnat, M.; Schmerber, G.; Colis, S.; Dinia, A.; Müller, D.; Ferblantier, G.; Slaoui, A.

doi:10.1063/1.3692747

Cited by 53 publications

(25 citation statements)

References 16 publications

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“…A synthesis of the Hall effect results is presented in Table 2 where the best values of electrical resistivity and carriers mobility are about 4.0 10 −2 Ω cm and 0.90 cm 2 /V s respectively obtained for 1% effective (3% nominal) Nd doping. Such results are in agreement with those recently reported in Nd-doped SnO 2 thin films [40].…”

Section: -P3supporting

confidence: 83%

Investigation of the structural, optical and electrical properties of Nd-doped ZnO thin films deposited by spray pyrolysis

Douayar¹,

Prieto²,

Schmerber³

et al. 2013

Eur. Phys. J. Appl. Phys.

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Abstract. Neodymium-doped zinc oxide (NZO) thin films were deposited on glass substrates by spray pyrolysis technique. X-ray diffraction patterns have shown that both undoped and Nd-doped ZnO films exhibit the hexagonal wurtzite crystal structure with a preferential orientation along [0 0 2] direction. The effective doping concentration has been determined by Rutherford backscattering measurements showing that the neodymium is not incorporated easily into ZnO host matrix. The surface roughness was shown to increase with Nd doping. NZO films are highly transparent in the visible region. The lowest electrical resistivity value of about 4.0 10 −2 Ω cm was obtained for 1% Nd effective doping.

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Section: -P3supporting

confidence: 83%

Investigation of the structural, optical and electrical properties of Nd-doped ZnO thin films deposited by spray pyrolysis

Douayar¹,

Prieto²,

Schmerber³

et al. 2013

Eur. Phys. J. Appl. Phys.

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“…Therefore, it is very important to synthesize nanoparticles with desired sizes and properties. The common routes used for the synthesis of nanoparticles include sol-gel method [3,4], hydrothermal technique [5], polyol method [6], chemical vapor deposition [7], spray pyrolysis [8,9], pulsed laser deposition [10], high vacuum evaporation [11], and co-precipitation [12,13].…”

Section: Introductionmentioning

confidence: 99%

Variation in luminescence and bandgap of Zn-doped SnO2 nanoparticles with thermal decomposition

Zulfiqar

Yuan

Jiang

et al. 2016

J Mater Sci: Mater Electron

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Zn doped Tin oxide (SnO 2 :Zn) nanoparticles have been synthesized by the chemical precipitation route with different thermal decomposition temperatures having emission intensities in visible light and narrowed bandgap. Band gap narrowing and emission intensities can be controlled by doping and calcination. The average particle sizes estimated by TEM agree with those calculated by XRD to be around 18.48 and 21.44 nm and the optical bandgap values found to be 1.30 and 2.52 eV in SnO 2 :Zn annealed at 400 and 600°C, respectively. Blue shift in bandgap and decrease in photoluminescence intensity is noticed in (SnO 2 :Zn) nanoparticles with high annealing temperature, which is due to large grain sizes. As the grain sizes grow so defect density decreases and crystallanity increases. These defects act as luminescent centers and cause decrease in emission intensity and increase in band gap.

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“…Table I summarizes the reported optical properties and sheet resistance values of various doped and undoped SnO2 films. [23][24][25][26][27][28][29][30][31][32][33][34][35][36] Our R sh found to be higher than that of the previous contributions on FTO films. 14,23,24,26 But, the decreasing trend of sheet resistance with increasing film's thickness is consistent with that of earlier measurements.…”

Section: Discussionmentioning

confidence: 70%

Effect of calcination environments and plasma treatment on structural, optical and electrical properties of FTO transparent thin films

et al. 2017

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The dependence of the structural, optical and electrical properties of the FTO thin films on the film thickness (276 nm - 546 nm), calcination environment, and low temperature plasma treatment were examined. The FTO thin films, prepared by spray pyrolysis, were calcinated under air followed by either further heat treatment under N2 gas or treatment in low temperature atmospheric plasma. The samples before and after calcination under N2, and plasma treatment will be represented by Sair, SN2 and SPl, respectively, hereafter. The thin films were characterized by measuring the XRD spectra, SEM images, optical transmittance and reflectance, and sheet resistance of the films before and after calcination in N2 environment or plasma treatment. The presence of sharp and narrow multiple peaks in XRD spectra hint us that the films were highly crystalline (polycrystalline). The samples Sair with the thickness of 471 nm showed as high as 92 % transmittance in the visible range. Moreover, from the tauc plot, the optical bandgap Eg values of the Sair found to be noticeably lower than that of the samples SN2. Very surprisingly, the electrical sheet resistance (Rsh) found to decrease following the trend as Rshair > RshN2 > RshPl. The samples exposed to plasma found to possess the lowest RshPl (for film with thickness 546 nm, the RshPl was 17 Ω/sq.).

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Photoluminescence of Nd-doped SnO2 thin films

Cited by 53 publications

References 16 publications

Investigation of the structural, optical and electrical properties of Nd-doped ZnO thin films deposited by spray pyrolysis

Investigation of the structural, optical and electrical properties of Nd-doped ZnO thin films deposited by spray pyrolysis

Variation in luminescence and bandgap of Zn-doped SnO2 nanoparticles with thermal decomposition

Effect of calcination environments and plasma treatment on structural, optical and electrical properties of FTO transparent thin films

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