Photoluminescence of porous silicon coated by SILD method with LaF3 nanolayers

Energy Transfer Study on Tb3+/Eu3+ Co-Activated Sol-Gel Glass-Ceramic Materials Containing MF3 (M = Y, La) Nanocrystals for NUV Optoelectronic Devices

“…Since the phonon energies of fluorides-usually in a range from 400 up to 500 cm −1 [17]-are significantly lower compared to phosphates (~1250 cm −1 ) [18] or borates (~1350 cm −1 ) [19], they are considered as great candidates for generating an efficient and long-lived luminescence of RE 3+ . Among fluorides, special attention should be paid to YF 3 and LaF 3 crystal phases characterized by wide band gap (>10 eV) and exceptionally low-phonon energies equal to~358 as well as~350 cm −1 , respectively, in which M 3+ (M = Y, La) cations from crystal lattices can be easily substituted by RE 3+ ions without any charge compensation [20][21][22][23]. Due to the above reasons, the oxyfluoride glass-ceramic materials (GCs) containing fluoride nanocrystals are considered as an interesting class of advanced optical materials, which are frequently reported in the literature [24][25][26][27][28].…”

Surface modification of mesoporous silicon for nanoelectronics applications

“…The stability of luminescent properties can be achieved at successive ionic layer deposition of lanthanum fluoride layers on mesoporous free standing layers, which converts the nonluminescent material to luminescent [20]. In Fig.3 (a) the results of photoluminescence researching of the mesoporous material for different numbers of deposition cycles are shown.…”

“…Produced samples had a porosity of 50-55% and thickness about 200 µm. On the obtained samples of PS the lanthanum fluoride films were deposited by SILD method [20]. The process of LaF 3 synthesis consists in the repeated cyclical treatment of substrates in solutions of reagents which was carried out by the method of impregnation using specially developed semiautomatic arrangement.…”