Photoluminescence of Yb3+-doped CuInS2 single crystals prepared by In-flux and chemical vapor transport methods

Optical modeling of compound CuInS2 using relative dielectric function approach and Boubaker polynomials expansion scheme BPES

“…The study of the orientation effect of the crystallites and bulk inhomogeneities allow us to understand an important feature of sprayed CuInS 2 thin films optical behavior: the lack of the oscillation phenomena in T( ) and R( ) spectra [24][25][26][27][28][29]. The model has been enhanced by considering air-inclusion density q-dependent effective dielectric function, and introducing an effective reflection-transmission-dependent absorption profile.…”

Effect of zinc doping and temperature on the properties of sprayed CuInS2 thin films

“…This feature corresponds to donor-acceptor pair transition (DAP) between a sulfur vacancy and an indium vacancy (or) Cu (or) Zn on an indium site [15,[47][48][49] (or) band-band gap luminescence of Zn doped CuInS 2 crystals deposited on the substrate [50]. On further increase in temperature from 325 to 400 1C, there is a decrease in emission of intensities and the peak at which the maximum emission occurs slightly shifts towards shorter wavelength region.…”