Photoluminescence of ZnO films excited with light of different wavelength

Effect of alien cations on the growth mode and self-assemble fashion of ZnO nanostructures

“…These PL spectra all exhibit two emission bands located at about 380 and 550 nm, respectively, which is consistent with literature [28]. The UV band emission can be assigned to the emission from a free exciton under low excitation intensity, and the peaks in the green band possibly originate from the electron transition from the level of the ionized oxygen vacancies to the valence band [29]. The intensity of both UV and defect-related green emission increases by the introduction of alien cations.…”

The structural and photoluminescence studies related to the surface of the TiO2 sol prepared by wet chemical method

“…4 (left)), which includes six main Gaussian-type peaks at 366, 396, 428, 450, 468 and 550 nm, denoted as A, B, C, D, E and F, respectively. The 366 nm peak stems from CB → VB direct recombination [20], which is larger than the forbidden gap because TiO 2 is indirect gap semiconductor [5,21], and the peak at 550 nm is ascribed to indirect recombination via the oxygen vacancies [20]. The other peaks should be related to the surface electronic structure and indirect recombination via bulk defects.…”

Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering

“…Among these processes, the sputtering process is one of the best methods for preparation of AZO films because it has a lot of advantages such as low substrate temperature, good surface roughness, and low cost [11][12][13][14]. However, the pulsed DC magnetron sputtering process has been seldom used for the preparation of AZO films in spite of its good capability.…”