Photoluminescence of ZnO:Sb nanobelts fabricated by thermal evaporation method

Room-temperature violet luminescence and ultraviolet photodetection of Sb-doped ZnO/Al-doped ZnO homojunction array

“…The peaks centered at 531.80 eV (indicated by the blue curve fit) and 540.44 eV (indicated by the red curve fit) are attributed to the binding energies of Sb 3 d 5/2 and Sb 3 d 3/2 , which indicate the successful integration of Sb into the ZnO microrod array. The peak at 532.15 eV (indicated by the green curve fit) is attributed to O 1 s , which mainly comes from oxygen absorption such as H 2 O, C-O, or HO- [16]. To further study the doping concentration of Sb atoms of our device, we have performed energy-dispersive X-ray spectroscopy (EDS) analysis.…”

“…The result of the fitting curve is shown in the inset of Figure 5 with α = 7.8 × 10 -4 eV/K, β = 510 K, and E (0) = 3.322 eV. Moreover, the peak of the photoluminescence can be attributed to the free electron-to-acceptor level transition [16,20]. The acceptor binding energy is given by…”

Sn–Ga co-doped ZnO nanobelts fabricated by thermal evaporation and application to ethanol gas sensors

“…In order to improve the opto-electrical properties of ZnO, C.H. Zang [5] fabricated Sb doped ZnO on nanobelts by a thermal evaporation method and studied their temperature-dependent photoluminescence properties. Ramin Yousefi [6] also investigated the optical behaviors of ZnO nanobelts that were doped with S and Sn as two different types of doping materials.…”

Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

“…The energy levels or bands are created by the band tailing effect due to a high doping concentration. 23 When the doping concentration increases, the density of the randomly distributed charged impurities also increases resulting in a potential fluctuation in the vicinity of the conduction band edge, and the potential fluctuation would cause the band edge energy to vary spatially. 23 There upon, there are always fluctuated band edges that are below the unperturbed one and the band tail states are created then.…”

“…23 When the doping concentration increases, the density of the randomly distributed charged impurities also increases resulting in a potential fluctuation in the vicinity of the conduction band edge, and the potential fluctuation would cause the band edge energy to vary spatially. 23 There upon, there are always fluctuated band edges that are below the unperturbed one and the band tail states are created then. Since the Fermi-Dirac function is very close to 1 below the Fermi level when the temperature is close to absolute zero, the radiative recombination related to the band tail states just below the conduction band edge could be evidently captured in spite of relatively low DOS.…”