Photoluminescence Oscillations in LEDs Arise from Cylinder-like Nanostructures Fabricated by a Femtosecond Laser

Xie, Yuduo; Sun, Jingya; Jiang, Lan; Wang, Qingsong; Wang, Feifei; Pan, Changji

doi:10.1021/acs.jpcc.9b03939

Cited by 2 publications

(1 citation statement)

References 30 publications

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“…Interestingly, intensity undulations are observed in the PL spectra. We attribute this phenomenon to the Fabry–Pérot interference between the GaN/PSS interface and the GaN/air interface 38 , 39 . The refraction index of GaN is ~2.5 while the sapphire is ~1.8 40 .…”

Section: Resultsmentioning

confidence: 94%

MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors

et al. 2021

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A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced by three orders of magnitude and its noise spectral intensity shows distinct improvement compared with the traditional Cr/Au–GaN–Cr/Au MSM photodetector. The improved device performance is attributed to low-defect MXene-GaN van der Waals interfaces. Thanks to the high quality MXene-GaN interfaces, it is possible to verify that the patterned substrate can locally improve both light extraction and photocurrent collection. The measured responsivity and specific detectivity reach as high as 64.6 A/W and 1.93 × 1012 Jones, respectively, making it a potential candidate for underwater optical detection and communication. The simple fabrication of MXene-GaN-MXene photodetectors spearheaded the way to high performance photodetection by combining the advantages of emerging 2D MXene materials with the conventional III-V materials.

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Section: Resultsmentioning

confidence: 94%