Abstract:High-density (~1010 cm-2) silicon nanowires are grown directly from n-(111) single crystal silicon based on solid-liquid-solid mechanism by using Au-Al films as metallic catalyst. The results indicate that the optimal parameters to realize Si nanowires with high density and uniform distribution are as follows. The thickness of Au-Al film is between 5 and 15 nm, the temperature is 1100℃, and the flow of N2 is 1.5 L/min. The diameters and lengths of the formed Si nanowires are 100 nm and from several micrometers… Show more
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