2015
DOI: 10.7498/aps.64.148103
|View full text |Cite
|
Sign up to set email alerts
|

Photoluminescence properties of Eu doped Si nanowires

Abstract: High-density (~1010 cm-2) silicon nanowires are grown directly from n-(111) single crystal silicon based on solid-liquid-solid mechanism by using Au-Al films as metallic catalyst. The results indicate that the optimal parameters to realize Si nanowires with high density and uniform distribution are as follows. The thickness of Au-Al film is between 5 and 15 nm, the temperature is 1100℃, and the flow of N2 is 1.5 L/min. The diameters and lengths of the formed Si nanowires are 100 nm and from several micrometers… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 15 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?