Photoluminescence Properties of Indium Tin Oxide Films Deposited on Glass Substrate

Dongsheng, 王东生 Wang; Jianzhou, 杜建周 Du; Xuehua, 李雪华 Li; Yanyan, 许艳艳 Xu; Yongxiang, 李永祥 Li

doi:10.3788/cjl201138.0107002

Cited by 2 publications

(3 citation statements)

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“…Some researchers used lower energy photons for PL excitation and, as a result, they do not see the high energy (∼3.8 eV) emission. We saw less low energy PL (< 2.1 eV) than was reported in some previous papers [48,50]. Unlike some research with nanoparticles [17], our films were much thicker and had grains much larger than the Bohr radius of In 2 O 3 (2.14 nm) [51], so quantum confinement was not considered in this paper.…”

Section: Photoluminescence Analysiscontrasting

confidence: 72%

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Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering

Kaveh,

Lawrence,

Bender

et al. 2023

Mater. Res. Express

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Manganese-doped indium tin oxide (ITO) thin films (0–12.8 at% Mn) were deposited by DC magnetron sputtering. The structural, electrical, and optical properties of the films were studied. Optical characterization was emphasized and included ellipsometry, transmission, and photoluminescence (PL) measurements. Features of the energy band structure of ITO and Mn-ITO were extracted from PL spectra and Tauc analyses of absorption data. We concluded that the fundamental bandgap of ITO is ∼2.8 eV. A separate deep valence band, ∼0.8 eV below the valence band maximum, was confirmed to be involved in higher energy optical absorption and emission transitions. Both of these observations were consistent with recent published theoretical studies and spectroscopic measurements (XPS, XES, etc). Mn addition was found to result in a decrease of the transition energies. Additionally, Burstein–Moss shifts were observed.

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Section: Photoluminescence Analysiscontrasting

confidence: 72%

“…As reported by other groups, the PL emission from ITO covers a broad energy range [17,18,[46][47][48][49][50]. Some researchers used lower energy photons for PL excitation and, as a result, they do not see the high energy (∼3.8 eV) emission.…”

Section: Photoluminescence Analysismentioning

confidence: 89%

Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering

Kaveh,

Lawrence,

Bender

et al. 2023

Mater. Res. Express

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“…There are two generally accepted mechanisms of fluorescence, [18] quantum confinement [19] and defect-related effects. [13,18,20] In our study, the influence of confinement was considered to be small since our samples were thick amorphous films. On the other hand, the influence of oxygen vacancy was suggested by several experiments.…”

Section: As-deposited Samplementioning

confidence: 99%

The Influence of Oxygen‐Related Defects on the Formation of In₂O₃‐Based Low‐Fluorescence Transparent Conducting Film

Shimizu

Shugo

Mori

et al. 2023

Physica Status Solidi (a)

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When the fluorescence of a material under transparent conductive films is measured, it is sometimes required that the transparent conductive films have low fluorescence intensity to prevent stray light. Herein, the oxygen partial pressure during sputtering is varied and the transmittance, resistivity, and fluorescence intensity are measured to clarify the cause of the fluorescence of indium tin oxide (ITO) and In2O3. The fluorescence intensity of both ITO and In2O3 decreases with an increase in the oxygen partial pressure in the case of as‐deposited films. The cause of fluorescence is considered to be oxygen vacancies. ITO can maintain low resistivity even with a small amount of oxygen vacancies since it contains SnO2, which generates carriers. High‐temperature annealing also introduces other defects, which increases the fluorescence intensity.

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Photoluminescence Properties of Indium Tin Oxide Films Deposited on Glass Substrate

Cited by 2 publications

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Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering

Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering

The Influence of Oxygen‐Related Defects on the Formation of In₂O₃‐Based Low‐Fluorescence Transparent Conducting Film

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Photoluminescence Properties of Indium Tin Oxide Films Deposited on Glass Substrate

Cited by 2 publications

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Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering

Ellipsometry, transmission, and photoluminescence characterization of Mn-doped ITO thin films deposited by DC magnetron sputtering

The Influence of Oxygen‐Related Defects on the Formation of In2O3‐Based Low‐Fluorescence Transparent Conducting Film

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The Influence of Oxygen‐Related Defects on the Formation of In₂O₃‐Based Low‐Fluorescence Transparent Conducting Film