Photoluminescence properties of porous InP filled with ferroelectric polymers

A short review of the electrochemical technologies for pit arrays fabricated on the surfaces of indium phosphide wafer

“…High-density nanopore arrays are one of the most promising nanostructures among various structures due to their large surface area and low light reflectivity [ [11] , [12] , [13] ]. Porous structure materials have great potential future application in photoelectric conversion devices [ 14 , 15 ], such as solar cells [ [16] , [17] , [18] , [19] ], photoelectrochemical hydrogen production [ [20] , [21] , [22] ], and photodetectors [ 16 , [23] , [24] , [25] , [26] , [27] , [28] ].…”

“…Many nanoporous materials have been assembled by this method, such as GaAs [ 13 , 30 , 31 ], Si [ 17 , 18 , 26 , 32 ], GaP [ 23 , 28 , [33] , [34] , [35] , [36] ] and GaN [ 13 , 37 , 38 ]. Electrochemical etching and applications of InP nanopores have also attracted a lot of attention [ 27 , [39] , [40] , [41] , [42] , [43] , [44] , [45] ]. However, there are few specific reviews on electrochemical etching experimental devices and methods for InP.…”