Photoluminescence Properties of SnO₂·H₂O Phosphor

Abstract

SnO 2 · H 2 O phosphor was synthesized by chemically etching metallic tin in aqueous HNO 3 solution. The optical properties of the synthesized phosphor were investigated by diffuse reflectance measurement, photoluminescence (PL) analysis, and PL excitation (PLE) spectroscopy. SnO 2 · H 2 O phosphor exhibited red (R) and green (G) emission bands with peaks at ∼600 and ∼500 nm, respectively. The PL spectra showed a clear dependence not only on lattice temperature but also on excitation light wavelength and power. The R emission band showed a single excitation peak at ∼4 eV, while the PLE spectrum of the G emission band exhibited three main peaks at ∼3.9, ∼4.5, and ∼5.4 eV. Such PL properties were interpreted considering electron transfer at excited states and using the configurational-coordinate model. The PL properties of SnO 2 · H 2 O phosphor were also discussed in comparison with those of SnO 2 nanomaterials.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.63.180.147 Downloaded on 2015-03-03 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.63.180.147 Downloaded on 2015-03-03 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.63.180.147 Downloaded on 2015-03-03 to IP

Properties and Photocatalytic Activity of β‐Ga2O3 Nanorods under Simulated Solar Irradiation

“…The emission spectrum shows a broad emission band under a 281 nm or 376 nm excitation, which has been observed with PL spectra in Ga 2 O 3 [17][18][19], due to the oxygen vacancy ( O ) and gallium-oxygen vacancy pairs ( Ga , O ) in the Ga 2 O 3 [20]. Besides, the asymmetric emission band shape can be explained by the electron-phonon interaction in the substances [21]. The major emission band can be separated into three Gaussian bands centered at about 419, 442, and 470 nm, respectively.…”

Photoluminescence Properties and Energy-Level Analysis of Ga2O3:Tb3+Green Phosphor Prepared by Metal Organic Deposition

“…In Fig. 7, the I PL value gradually increases with increasing T above ∼100 K. This phenomenon is very interesting and has also been previously observed in some phosphors, such as Ga 2 O 3 :Cr 3+ , 14 SnO 2 • H 2 O, 42 SnO 2 :Mn 2+ , 43 SnO 2 :Eu 3+ , 44,45 SnCl 2 , 46 MnF 2 , 47 CaCO 3 :Ce 3+ ,Mn 2+ , 48 K 2 SiF 6 :Mn 4+ , 49 BaSiF 6 :Mn 4+ , 50 and ZnSiF 6 • 6H 2 O:Mn 4+ . 51,52 An increase in the PL intensity with increasing T cannot be explained by the simple thermal quenching model of Eq.…”

Controlled synthesis of Sn-based oxides via a hydrothermal method and their visible light photocatalytic performances

“…The E g of the prepared SnO 2 is 3.73 eV and it is consistent well with the reported value. 41,[50][51][52][53] This result clearly indicates that the absorption of SnO 2 could be extended to the visible light region by doping with Sn 2+ . 11,41 As Sn 2+ tends to be oxidized to Sn 4+ at an elevated temperature, the increase of E g with hydrothermal temperature should be caused by the reduction of Sn 2+ doping content.…”

“…SnO 2 $H 2 O shows a similar diffraction pattern to the tetragonal SnO 2 . 50 TGA and DTA analyses of the prepared Sn 2+ -SnO 2 were carried out to further corroborate the identication. As shown in Fig.…”