Photoluminescence properties of SnO2 thin films grown by thermal CVD

Jeong, Jin Wook; Choi, S.P; Chang, Cha Ik; Shin, Dongwoo; Park, Jin-Sung; Lee, B.-T.; Park, Yeong-Jun; Song, Ho‐Jun

doi:10.1016/s0038-1098(03)00614-8

Cited by 198 publications

(104 citation statements)

References 10 publications

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“…The PL of bulk SnO 2 was reported to be too weak to be distinguishable at room temperature [14]. SnO 2 thin films were reported to show a broad peak at around 396 nm [15]. A yellow PL peak was reported to be also detected at 590 nm for SnO 2 powder [16].…”

Section: Methodsmentioning

confidence: 99%

Growth of SnO2 nanowires by thermal evaporation on Au-coated Si substrates

Park

Chen

Kang

et al. 2009

Current Applied Physics

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Section: Methodsmentioning

confidence: 99%

Growth of SnO2 nanowires by thermal evaporation on Au-coated Si substrates

Park

Chen

Kang

et al. 2009

Current Applied Physics

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“…Most of the reports in literature suggested a dominant broad photoluminescence (PL) peak in the visible range, [17][18][19][20][21][22][23][24][25] whereas others revealed the existence of UV emission in SnO 2 . [26][27][28][29][30][31] Thin films are indispensable for device applications, but there have been only a few works so far on the optical properties of SnO 2 thin films. 32,33 Until now, light emission in SnO 2 and the related mechanisms have remained as an issue of debates, and there is also a paramount need for theoretical insights.…”

Section: Introductionmentioning

confidence: 99%

Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

et al. 2012

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Although many oxide semiconductors possess wide bandgaps in the ultraviolet (UV) regime, currently the majority of them cannot efficiently emit UV light because the band-edge optical transition is forbidden in a perfect lattice as a result of the symmetry of the band-edge states. This quantum mechanical rule severely constrains the optical applications of wide-bandgap oxides, which is also the reason why so few oxides enjoy the success of ZnO. Here, using SnO 2 as an example, we demonstrate both theoretically and experimentally that UV photoluminescence and electroluminescence can be recovered and enhanced in wide-bandgap oxide thin films with 'forbidden' energy gaps by engineering their nanocrystalline structures. In our experiments, the tailored low-temperature annealing process results in a hybrid structure containing SnO 2 nanocrystals in an amorphous matrix, and UV emission is observed in such hybrid SnO 2 thin films, indicating that the quantum mechanical dipole-forbidden rule has been effectively overcome. Using this approach, we demonstrate the first prototypical electrically pumped UV-lightemitting diode based on nanostructured SnO 2 thin films.

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“…These EPR spectra were found to contain two different components, one from single isolated ions and the other from the clusters. Samples with 0.05 mol% Sn ions dopant (lower content) showed sextet due to single ion, also sharp line at g=1.5 electronic [16][17][18].…”

Section: Citationmentioning

confidence: 97%

Study of Nanomaterials Prepared by Combustion Method Using High Heat Combustion Chamber and Agreement with the Reported Results

Ramasamy¹,

Prabhavathi²,

Nivetha³

et al. 2017

Fluid Mech Open Acc

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Nanocrystalline materials such as Sn doped In 2 O 3 Indium Tin Oxide (ITO) were prepared by this Combustion technique and characterized. Presence of electronic centers in Nanocrystalline ITO is observed from Raman studies and the same has been confirmed by photoluminescence studies. The oxidation properties of ITO were studied by X-ray Diffract meter grain sizes are confirmed by structural studies. As against the expectation of oxide on individual Nano grains of In-Sn alloy, ITO Nano grains grew into faceted Nano grains on heat treatment in air and O 2 atmosphere. The growth of ITO under O 2 atmosphere showed pentagon symmetry. This Nanocrystalline ITO has been studied using Electron paramagnetic resonance (EPR) measurements. Structural studies by X-Ray Diffraction (XRD) showed the presence of dominant β phase with a minor quantity of α phase. In EPR, isotopic chemical shift peaks were observed and they are assigned to originate from the α, β phases of ITO and grain boundary component respectively. From this study, different atomic arrangements were identified in grain boundaries compared to the same within the grain in Nanocrystalline ITO. The atomic arrangement in the grain boundary seems to be somewhat different from regular periodic arrangement whereas inside the grain there is a good periodic arrangement of atoms. Above 5 mol%, Sn ions form correlated clusters, which lead to broadening. These EPR spectra were formed to contain two different components, one from the single isolated ions and the other from the clusters.

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Photoluminescence properties of SnO2 thin films grown by thermal CVD

Cited by 198 publications

References 10 publications

Growth of SnO2 nanowires by thermal evaporation on Au-coated Si substrates

Growth of SnO2 nanowires by thermal evaporation on Au-coated Si substrates

Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

Study of Nanomaterials Prepared by Combustion Method Using High Heat Combustion Chamber and Agreement with the Reported Results

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