2005
DOI: 10.1590/s0103-97332005000600015
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Photoluminescence properties of Te doped AlGaAsSb alloys

Abstract: A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb alloys lattice matched to InP is presented. Photoluminescent temperature and excitation intensity dependences are employed to discuss the origin of the dominant transition and the influence of the presence of Al and Te on the fluctuation of the electrostatic potential in the epitaxial layers. The behavior of PL dominant transitions is associated with the quasi-donor-acceptor-pair (QDAP) model at a low temperature interval. Th… Show more

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Cited by 11 publications
(4 citation statements)
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“…5d) in a log scale. The set of PL spectra in the linear scale shows an explicit " S" behavior for the dominant transition with increasing temperature similar to that observed for undoped and Te doped bulk samples of antimony family epilayers analyzed elsewhere [21]. The PL spectra presented indicate two transitions, one with lower energy peak transition more intense at higher temperatures.…”
Section: Resultssupporting
confidence: 74%
“…5d) in a log scale. The set of PL spectra in the linear scale shows an explicit " S" behavior for the dominant transition with increasing temperature similar to that observed for undoped and Te doped bulk samples of antimony family epilayers analyzed elsewhere [21]. The PL spectra presented indicate two transitions, one with lower energy peak transition more intense at higher temperatures.…”
Section: Resultssupporting
confidence: 74%
“…From Figure 2e, the formation energy of C is higher than Si, and the concentration of C B is estimated to be around 1.53 × 10 14 cm −3 , and of C As is around 6.36 × 10 10 cm −3 , with graphite as reference. In the literature, usually the concentration of DAP defects that induces photoluminescence falls into the range of 10 15 to 10 18 cm −3 , [ 43–45 ] higher than our simulated concentrations. However, with C defects in other initial form other than graphite, the formation energy will be lower, resulting in much higher concentration of C B and C As .…”
Section: Figurecontrasting
confidence: 46%
“…In this work, we have examined conventional C–S n-i-p junction GaAsSb NWs (Figure a) grown by self-assisted molecular beam epitaxy (MBE) with variation in the intrinsic “i”- region width and a simple Te compensation approach to improve the device performance, as undoped GaAsSb is slightly p-type, which is attributed to residual acceptor impurity, namely, Ga vacancy-related defects and Ga antisite defects (V Ga Ga Sb ). , To reduce the background carrier concentration, n-dopant pulsing in the form of a GaTe source was introduced during the growth of the i-GaAsSb shell. We demonstrate the fabrication and characterization of MBE-grown room-temperature (RT) conventional devices for the application of near-IR photodetectors at wavelengths approaching 1.1 μm with high rectification ratio, enhanced responsivity and detectivity, and low series resistance.…”
Section: Introductionmentioning
confidence: 99%