Photoluminescence quantum efficiency and dynamics in ZnSe1−xTex and CdS1−xSex mixed crystals

Investigation of carrier dynamics in Zn1−xMgxO by time-resolved photoluminescence

“…2(b) shows a good correlation between the increase of the carrier recombination probability and the decrease of the integrated PL intensity for the x¼ 0.21 sample. We use the thermal activation model [24] I PL pð1 þ A e ÀEa=kBT Þ À1 ð1Þ…”

Photoluminescence Properties of Ordered Mesoporous ZnO

“…In the low-temperature regime, however, an additional emission-quenching channel appears for the nanoporous samples. Therefore, we have to expand the standard Bose-model commonly used to describe thermal-activated decrease of the luminescence efficiency, for the proper description of the experimental findings I P L ∝ ∑ j = 1 , 2 I j ( 1 + A j e E normala , j / k normalB T ) − 1 Here, two carrier fractions (1,2) are introduced with the corresponding activation energies E a,(1;2) of the PL quenching processes. Fits of the experimental data with the theoretical model are shown by solid lines in Figure .…”

Growth of undoped and chromium-doped CdSxSe1−x crystals by the physical vapor transport method

“…Figure 2 shows the optical-absorption spectra in the wavelength range of 500-2,500 nm for undoped CdS 0.8 Se 0.2 (sample 2), postgrowth Cr-diffused CdS 0.8 Se 0.2 , and for sample 5, which was doped during growth. 7,8 The alloy disorder leads to potential fluctuations in the energy bands of the solid solutions. The peak position was found to be only slightly blue-shifted as compared to the absorption peak of Cr-doped CdSe at 1.92 m. 4 However, this shift is much shorter than the bandgap shift of CdS 0.8 Se 0.2 (2.1 eV), compared to CdSe (1.7 eV).…”