Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Dyksik, Mateusz; Motyka, M.; Kurka, Marcin; Ryczko, K.; Dallner, M.; Höfling, Sven; Kamp, M.; Sęk, G.; Misiewicz, J.

doi:10.1007/s11082-016-0667-y

Cited by 8 publications

(6 citation statements)

References 33 publications

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“…This is consistent with the presence of intrinsic Ga Sb antisite defects reported in the GaAsSb system [9,34] and additionally, in NWs the Sb distribution is inhomogeneous both axially [9] and radially [14]. Hence, the origin of PL intensity quenching at higher temperatures (>100 K) in as-grown NWs could be assigned to the native defect-related non-radiative channels, as also reported by Dysik et al [34] in InAs/GaInSb type-II quantum wells. Figure 3(c) shows the RT Raman spectra of as-grown and annealed GaAsSb NWs.…”

Section: Resultssupporting

confidence: 89%

“…The second larger value activation energy, E b , of 80 meV falls in the range of 60-120 meV commonly ascribed to lattice defects consisting of Ga Sb antisite defects and a complex related to Ga-vacancies [33]. This is consistent with the presence of intrinsic Ga Sb antisite defects reported in the GaAsSb system [9,34] and additionally, in NWs the Sb distribution is inhomogeneous both axially [9] and radially [14]. Hence, the origin of PL intensity quenching at higher temperatures (>100 K) in as-grown NWs could be assigned to the native defect-related non-radiative channels, as also reported by Dysik et al [34] in InAs/GaInSb type-II quantum wells.…”

Section: Resultssupporting

confidence: 77%

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Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

et al. 2018

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In this work, we report on the p-i GaAsSb/AlGaAs nanowires (NWs) ensemble device exhibiting good spectral response up to 1.1 μm with a high responsivity of 311 A W, an external quantum efficiency of 6.1 × 10%, and a detectivity of 1.9 × 10 Jones at 633 nm. The high responsivity of the NWs has been attributed to in situ post-growth annealing of GaAsSb axial NWs in the ultra-high vacuum. The enabling growth technology is molecular beam epitaxy for the Ga-assisted epitaxial growth of these NWs on Si (111) substrates. Room temperature Raman spectra, as well as temperature dependent micro-photoluminescence peak analysis indicated suppression of band tail states and non-radiative channels due to annealing. A similar improvement in in situ annealed p-i GaAsSb NW ensemble with an AlGaAs passivating shell was inferred from a reduction in the Schottky barrier height as well as the NW resistance compared to the as-grown NW ensemble. These results demonstrate in situ annealing of nanowires to be an effective pathway for improving the optoelectronic properties of the NWs and the device thereof.

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Section: Resultssupporting

confidence: 89%

Section: Resultssupporting

confidence: 77%

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

et al. 2018

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“…It is well known that in ternary III-V NW material alloy systems, inhomogeneous composition and phase separation [7], atomic ordering [8], and miscibility gap [9] phenomena can have deleterious effects on electrical and optical properties for NW devices operating at room temperature (RT). In the GaAsSb material system, in particular in the NW configuration, the electronic and the optoelectronic properties are strongly dependent on Sb concentration due to its inhomogeneous distribution in NWs both axially and radially [10], and also on the presence of point defects such as intrinsic Ga Sb antisite defects and Ga vacancies [11,12].…”

Section: Introductionmentioning

confidence: 99%

Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in situ annealing in ultra-high vacuum

Parakh¹,

Johnson²,

Pokharel³

et al. 2019

Nanotechnology

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In this work, the first observation of the space charge limited conduction mechanism (SCLC) in GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxial technique, and the effect of ultra-high vacuum in situ annealing have been investigated. The low onset voltage of the SCLC in the NW configuration has been advantageously exploited to extract trap density and trap distribution in the bandgap of this material system, using simple temperature dependent current–voltage measurements in both the ensemble and single nanowires. In situ annealing in ultra-high vacuum revealed significant reduction in the trap density from 1016 cm−3 in as-grown NWs to a low level of 7 × 1014 cm−3 and confining wider trap distribution to a single trap depth at 0.12 eV. A comparison of current conduction mechanism in the respective single nanowires using conductive atomic force microscopy (C-AFM) further confirms the SCLC mechanism identified in GaAsSb ensemble device to be intrinsic. Higher current observed in current mapping by C-AFM, increased 4 K photoluminescence (PL) intensity along with reduced full-width half maxima and more symmetric PL spectra, and reduced asymmetrical broadening with increased TO/LO mode in room temperature Raman spectra for in situ annealed NWs again attest to effective annihilation of traps leading to the improved optical quality of NWs compared to as-grown NWs. Hence, the I–V–T analysis of the SCLC mechanism has been demonstrated as a simple approach to obtain information on growth induced traps in the NWs.

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“…The PL temperature dependences were fitted by the Arrhenius-type plots (see e.g. [40,41]) to identify possible additional channels of non-radiative recombination, appearing at higher temperatures, and determine their activation energies. In case of j thermally activated non-radiative recombination processes responsible for the PL quenching, the temperature dependence of the normalized PL intensity, I PL (T), can be described by the following relation [42]…”

Section: Temperature Dependences Of the Mid-ir Plmentioning

confidence: 99%

Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures

Комков¹,

Firsov²,

Chernov³

et al. 2018

J. Phys. D: Appl. Phys.

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Nanostructures with a submonolayer InSb type-II insertion inside a InAs/InGaAs type-I quantum well (QW) have been grown by molecular beam epitaxy on GaAs (0 0 1) substrates via a convex-graded InAlAs metamorphic buffer layer (MBL). Selection of optimal growth conditions and design of the MBL-virtual substrate system enables one to increase mid-infrared photoluminescence (PL) and internal quantum efficiency (IQE) of the nanoheterostructures. The maximum low temperature IQE of about 90% has been obtained owing to the residual strain engineering which has resulted in both reduction of the extended defect density in the QW, likely responsible for Shockley–Read–Hall non-radiative recombination, and suppression of the Auger recombination channels in the InAs QW and the barriers. Temperature dependence of the integrated PL intensity was analyzed to determine an activation energy of an additional high-temperature non-radiative process (~49 meV) related presumably to hole delocalization through acceptor states in the strained InAs QW.

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Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Cited by 8 publications

References 33 publications

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in situ annealing in ultra-high vacuum

Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures

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