Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds

Хомич, А. А.; Хмельницкий, Р. А.; Poklonskaya, O. N.; Аверин, А. А.; Bokova‐Sirosh, Sofya N.; Поклонский, Н. А.; Ralchenko, V.G.

doi:10.1007/s10812-019-00865-7

Cited by 14 publications

(4 citation statements)

References 36 publications

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“…A different temperature dependence is observed in another group of bands with maxima at 335, 1390, 1415, and 1740 cm −1 . The intensity of all of these four bands synchronously increases in the temperature range of 1350-1650 • C, much faster than the intensity of the diamond peak and simultaneously with the strengthening of the 580 nm band of H19 center in PL spectra [76].…”

Section: Evidence Of New Raman Bands After High-temperature Annealingmentioning

confidence: 90%

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

2020

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Disordering of crystal lattice induced by irradiation with fast neutrons and other high-energy particles is used for the deep modification of electrical and optical properties of diamonds via significant nanoscale restructuring and defects engineering. Raman spectroscopy was employed to investigate the nature of radiation damage below the critical graphitization level created when chemical vapor deposition and natural diamonds are irradiated by fast neutrons with fluencies from 1 × 1018 to 3 × 1020 cm−2 and annealed at the 100–1700 °C range. The significant changes in the diamond Raman spectra versus the neutron-irradiated conditions are associated with the formation of intrinsic irradiation-induced defects that do not completely destroy the crystalline feature but decrease the phonon coherence length as the neutron dose increases. It was shown that the Raman spectrum of radiation-damaged diamonds is determined by the phonon confinement effect and that the boson peak is present in the Raman spectra up to annealing at 800–1000 °C. Three groups of defect-induced bands (first group = 260, 495, and 730 cm−1; second group = 230, 500, 530, 685, and 760 cm–1; and third group = 335, 1390, 1415, and 1740 cm−1) were observed in Raman spectra of fast-neutron-irradiated diamonds.

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Section: Evidence Of New Raman Bands After High-temperature Annealingmentioning

confidence: 90%

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

2020

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“…14) As the temperature rises, the ZPL gradually broadens, and the linewidth at temperature T, denoted as , w approximately follows the empirical formula. 33) g T 3 0 0 3…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of magnetic sensitivity in ensemble NV centers

Zhang,

Wen,

et al. 2024

Jpn. J. Appl. Phys.

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The magnetic sensitivity of the ensemble NV centers is directly related to temperature. In this study, we systematically investigated the temperature dependence of photoluminescence properties and optical detection magnetic resonance in ensemble NV centers from 1.6 K to 300 K. The magnetic sensitivity of the ensemble NV centers increases with the temperature rising in the range of 1.6 K to 75 K due to changes in contrast and linewidth, reaching a minimum near 40 K. Furthermore, the decrease in sensitivity is attributed to laser intensity overload at low temperatures by studying the influence of laser power on contrast and linewidth. These results offer valuable insights into NV magnetic sensing applications.

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“…The ZPL quenching occurs due to the gradual replacement of radiative transitions with non-radiative ones for the same defect with the increase in the measurement temperature. In this case, the activation energy for thermal quenching of ZPL is equal to the energy difference between the crossover point of the excited and ground states and the minimum of the excited state [17]. The activation energies for thermal quenching are 119 meV, 124 meV, and 190 meV for the GR1, 550.3 nm, and 593 nm emissions, respectively.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of optical centres in ultrapure diamond after 200 keV electron irradiation

Wang¹,

Guo²,

Ding³

et al. 2020

J. Phys. D: Appl. Phys.

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In this work, we conduct a temperature-dependent study of optical centres in ultrapure diamond after 200 keV irradiation by photoluminescence spectra, which are performed in a temperature range of 80-200 K. The zero phonon lines (ZPLs) include sizes of 550.3 nm, 593 nm, and 741 nm (GR1 centre). With an increase in measurement temperature, the ZPLs shift to the lower energy side, together with intensity quenching and an increase in the full width at half maximum. These results are noted in models of lattice contraction and electronphonon coupling, and their inhomogeneous and homogeneous broadening mechanisms are also carefully distinguished by the Voigt function. The 550.3 nm and 593 nm emissions present harder bonds than the GR1 centre, close thermal quenching energies to the interstitial-related defect, a lower thermal softness than that of the ideal diamond, weak phonon bands at each lower energy side, and different broadening mechanisms with the GR1 centre, indicating that the 550.3 nm and 593 nm lines are possibly interstitial-related.

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Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds

Cited by 14 publications

References 36 publications

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

Temperature dependence of magnetic sensitivity in ensemble NV centers

Temperature dependence of optical centres in ultrapure diamond after 200 keV electron irradiation

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