Photoluminescence Spectra of ZnO Thin Film Composed Nanoparticles on Silicon and Porous Silicon

Eswar, Kevin Alvin; Husairi, F.S.; Aziz, Ameiruel Azwan Ab; Rusop, M.; Abdullah, Saifollah

doi:10.4028/www.scientific.net/amr.832.843

Cited by 5 publications

(5 citation statements)

References 17 publications

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“…Compared to NR, PL intensities of NF appear to be much higher, signifying a different defect mechanism within the structure, which requires a more detailed investigation. The appearance of the NBE peak at ∼430 nm, which is slightly red-shifted compared to other NBEs reported in the literature, can be attributed to a smaller bandgap of NF structures . Additionally, the variation in the concentration of native defects can also be responsible for the shift in the NBE peak of ZnO NF.…”

Section: Resultsmentioning

confidence: 51%

“…The appearance of the NBE peak at ∼430 nm, which is slightly red-shifted compared to other NBEs reported in the literature, can be attributed to a smaller bandgap of NF structures. 53 Additionally, the variation in the concentration of native defects can also be responsible for the shift in the NBE peak of ZnO NF. Several studies reported on defect contents in ZnO have indicated that the number of defects on the surface is higher than those existing within the bulk volume.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Zinc Oxide and Metal Halide Perovskite Nanostructures Having Tunable Morphologies Grown by Nanosecond Laser Ablation for Light-Emitting Devices

Abdullayeva

Altaf

Kumtepe

et al. 2020

ACS Appl. Nano Mater.

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This work reports a one-pot chemical bath deposition (CBD) method for the preparation of selectively grown, morphology-tunable zinc oxide (ZnO) nanostructures provided via straightforward nanosecond fiber laser ablation. Nanosecond fiber laser ablation is different from lithographic methods due to its simple, time saving, and efficient film scribing abilities. Here, multiple morphologies of the ZnO nanostructures on the same substrate have been grown via laser ablation of the ZnO seeding layer. Selective and controlled ablation of the titanium layer, ZnO growth inhibitor, resulted in systematic growth of nanorod arrays, while the application of extensive fluence energies resulted in the penetration of the laser beam until the glass substrate induced the nanoflake growth within the same CBD environment. The laser penetration depth has been numerically investigated via COMSOL Multiphysics heat module simulations, and the optical variations between two nanostructures (nanorod and nanoflake) have been examined via Lumerical FDTD. The simultaneous growth of two morphologies served as an efficient tool for the enhancement of photoluminescence intensities. It increased the average charge carrier lifetimes of the thin films from approximately 2.01 to 9.07 ns under the same excitation wavelengths. The amplification in PL performances has been accomplished via the capstone of all-inorganic halide perovskite (IHP) deposition that brought a successful conclusion to lifetime responses, which have been increased by 1.4-fold. The development of IHP sensitized nanoscaled multimorphological ZnO thin films can, therefore, be used as potential nanomaterials for light-emitting-device applications.

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Section: Resultsmentioning

confidence: 51%

Section: ■ Results and Discussionmentioning

confidence: 99%

Zinc Oxide and Metal Halide Perovskite Nanostructures Having Tunable Morphologies Grown by Nanosecond Laser Ablation for Light-Emitting Devices

Abdullayeva

Altaf

Kumtepe

et al. 2020

ACS Appl. Nano Mater.

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“…A mixture of HF 48% and absolute ethanol was used as electrolyte. The circuit was supplied with voltage of 100 V, and current densities of 20 mA/cm 2 [10]. The porous silicon was seeded by ZnO thin film using spin coated [11,12].…”

Section: Methodsmentioning

confidence: 99%

Post-Annealing Temperature Effect on ZnO Nanostructures Growth on Porous Silicon

Eswar

Shuhaimi

Akhir

et al. 2015

AMR

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In this study, ZnO nanostructures were synthesized on porous silicon (PSi) substrate using hydrothermal immersion method. Different post-annealing temperatures were varied from 300°C to 600°C. Surface morphology was studied by field emission scanning electron microscopy. It shows that a better shape was produce at annealing temperatures of 500°C. Structural studies of ZnO nanostructure were implemented using X-ray diffraction grating. The result shows post-annealing can influence the crystallinty of ZnO. Photoluminescence spectra were used to study the optical properties of ZnO nanostructure. The result shows that peak corresponds to ZnO nanostructures are appeared in UV range. Besides, broad peaks are also appeared in visible range which is attributed to structural defects and PSi substrate.

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“…In addition, good chemical and thermal stability, non-toxic material and high transparency in room temperature are additional advantages in devices fabrication [2]. There are various structures of ZnO have been produced such as nanoparticles, nanorods, nanowires, nano-flower and honey-comb [3][4][5][6]. The structure are highly depends on the methods applied such as hydrothermal, RF sputtering, sol-gel synthesis and pulsed laser ablation [7].…”

Section: Introductionmentioning

confidence: 99%

Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

Eswar

Suhaimi

Guliling

et al. 2018

IJET

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ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101).

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Photoluminescence Spectra of ZnO Thin Film Composed Nanoparticles on Silicon and Porous Silicon

Cited by 5 publications

References 17 publications

Zinc Oxide and Metal Halide Perovskite Nanostructures Having Tunable Morphologies Grown by Nanosecond Laser Ablation for Light-Emitting Devices

Zinc Oxide and Metal Halide Perovskite Nanostructures Having Tunable Morphologies Grown by Nanosecond Laser Ablation for Light-Emitting Devices

Post-Annealing Temperature Effect on ZnO Nanostructures Growth on Porous Silicon

Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

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