Photoluminescence studies of Eu3+ and Tb3+ activated Ba2SiO4 phosphor

Srikanth, K.; Narsihma, Lavudi; Narsimulu, Mangali; Kumar, Manchoju Satish; Laxminarayana, Kunja; Srinivas, M.

doi:10.1063/5.0019649

Cited by 2 publications

(1 citation statement)

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“…[8] In particular, they also discussed the energy transfer mechanism from Zn 2 GeO 4 host to Tb 3+ ion. Although some existing matrix materials, for instance, KSr(Cd,Y)(PO 4 ) 2 , [9] Ca 3 Al 2 Si 6 O 18 , [10,11] BiOCl, [12] Y 2 O 3 , [13][14][15][16] MgAl-NO 3 , [17] β -PbF 2 glass-ceramics, [18] Ba 2 SiO 4 , [19,20] etc, are all excellent hosts for Tb 3+ ion, their optimal excitation wavelengths are in the deep ultraviolet (200 nm-280 nm) region. As is well known, the semiconductor chips in DUV region are very expensive, which is undoubtedly unconducive to wider applications of nanophosphor-doped Tb 3+ ion in the field of lightemitting diode (LED) illumination.…”

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confidence: 99%

Photoluminescence of green nanophosphors Sr₂MgSi₂O₇ doped with Tb³⁺ under 374-nm excitation*

Mu¹,

Zhang²,

Bian³

et al. 2021

Chinese Phys. B

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A series of Sr2MgSi2O7:Tb3+ nanophosphors is prepared using a high-temperature solid-state reaction. The x-ray diffraction patterns show that the crystal structure of the sample is not significantly affected by Tb3+ ions. However, the images of the scanning electron microscope illustrate that the average size of nanoparticles becomes larger with the increase of Tb3+ concentration. Unlike earlier investigations on down-conversion emission of Tb3+ ion excited by deep ultraviolet light, in this work, the photoluminescence characteristics of Sr2MgSi2O7 nanophosphors doped with different Tb3+ concentrations are analyzed under 374-nm excitations. The intense green emission at 545 nm is observed at an optimal doping concentration of 1.6 mol%. The main reason for the concentration quenching is due to the electric dipole–electric dipole interaction among Tb3+ ions.

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