Photoluminescence studies of high-quality ZnO single crystals by hydrothermal method

Yoneta, Minoru; Yoshino, Kenji; Ohishi, Masakazu; Saito, Hideki

doi:10.1016/j.physb.2005.12.186

Cited by 11 publications

(8 citation statements)

References 11 publications

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“…Therefore, two channels of observed exciton luminescence quenching can be related to thermal disintegration of both donor-bound and free exciton, in agreement with other recent reports [7,8]. To interpret the physical mechanism of quenching processes of visible emission appears more difficult, since the nature of related defect centers is not entirely clear.…”

Section: Resultssupporting

confidence: 90%

Decay kinetics of the defect-based visible luminescence in ZnO

Nikl

Pazzi

Fabeni

et al. 2009

Journal of Luminescence

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Section: Resultssupporting

confidence: 90%

Decay kinetics of the defect-based visible luminescence in ZnO

Nikl

Pazzi

Fabeni

et al. 2009

Journal of Luminescence

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“…However, PL intensity of donor-bound exciton emissions decreased with increase in measurement temperature. Similar results for ZnO (0001) films have been reported by many researchers [15][16][17]. It is thought that emission at around 3.378 eV was FE and that homoepitaxial non-polar ZnO (1120) films had a strain-free structure.…”

Section: Contributedsupporting

confidence: 88%

Structure and optical properties of non‐doped and N‐doped ZnO films with non‐polar surfaces grown homoepitaxially on single crystal ZnO (11$ \bar 2 $0) substrates

Abe

Nakagawa

Chiba

et al. 2009

Phys. Status Solidi (c)

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Non‐doped ZnO films and nitrogen‐doped ZnO films (ZnO:N films) were grown epitaxially on non‐polar single crystal ZnO (11$ \bar 2 $0) substrates by using the plasma‐assisted reactive evaporation (PARE) method. The value of FWHM of the ω‐scan rocking curve of non‐doped ZnO (11$ \bar 2 $0) films were 26 to 62 arcseconds. Crystallinity of ZnO (11$ \bar 2 $0) films deteriorated with increase in N2 gas flow rate, but crystallinity of the films was better than that of ZnO (11$ \bar 2 $0) films grown on sapphire (11$ \bar 2 $0) substrates by the PARE method. Independently of N2 gas flow rate, AFM images of non‐polar ZnO films showed a smooth surface with about 1 nm of root mean square roughness. In near band‐edge PL spectra from these non‐doped ZnO films measured at 5 K, free‐exciton emission (FE) at about 3.378 eV, ionized‐donor‐bound excitons (D+X) at about 3.368 eV and neutral‐donor‐bound excitons (D0X) at about 3.362 eV were clearly observed. PL intensity of D+X of non‐polar ZnO:N films was decreased but that of donor‐acceptor pairs (DAP) emission at around 3.308 eV of the films increased with an increase in N2 gas flow rate. It is thought that N atoms occupied oxygen sites and surface state density were decreased with increase in N2 gas flow rate and that N atoms act as acceptors in ZnO. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…PL spectra Figure 2 shows the PL spectrum of as-grown ZnO crystal measured at room temperature in the range of 300-650 nm. A strong ultraviolet emission near the band edge was observed at 379 nm, which is attributed to the annihilation of exciton bound to localized neutral donor [15]. In the visible region, a very weak broad emission band was observed.…”

Section: Resultsmentioning

confidence: 95%

“…In the visible region, a very weak broad emission band was observed. Many researchers have reported the visible emission band in ZnO films, nano-articles and crystals [15][16][17]. It was proposed that the visible emission was related to the oxygen vacancy and fluorine doping can effectively eliminate the defect-associated visible emission [17].…”

Section: Resultsmentioning

confidence: 99%

Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals

Shen

et al. 2011

Cryst. Res. Technol.

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Transparent ZnO crystals were obtained by the flux Bridgman method from high temperature solution of 22 mol% ZnO-78 mol% PbF 2 system. The influence of annealing temperatures on the photoluminescence (PL) of ZnO crystal was investigated. An ultraviolet emission peak at about 379 nm was observed in PL spectra and the peak position has a weak blueshift for annealed samples. A green band centered at 523 nm appeared in the annealed samples and its intensity enhanced with the increase of annealing temperatures, while the intensity of the ultraviolet peak decreased considerably. However, the ultraviolet emission peak became the strongest after annealing at 1000 °C. This phenomenon was considered to be associated with oxygen vacancy and F -impurities induced by the PbF 2 flux. The results show that high temperature annealing in air seems helpful for improving the PL properties of ZnO crystal.

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Photoluminescence studies of high-quality ZnO single crystals by hydrothermal method

Cited by 11 publications

References 11 publications

Decay kinetics of the defect-based visible luminescence in ZnO

Decay kinetics of the defect-based visible luminescence in ZnO

Structure and optical properties of non‐doped and N‐doped ZnO films with non‐polar surfaces grown homoepitaxially on single crystal ZnO (11$ \bar 2 $0) substrates

Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals

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