Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy

Lai, Fang‐I; Kuo, Shou‐Yi; Lin, Woei-Tyng; Chen, Wei‐Chun; Hsiao, Chien-Nan; Liu, Yukai; Shen, Ji‐Lin

doi:10.1016/j.jcrysgro.2010.12.020

Cited by 7 publications

(2 citation statements)

References 20 publications

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“…The strong emission peaks around 1700 nm can be seen clearly, which corresponds to the near band edge (NBE) emission of InN. This IR-emission peak position is consistent with the NBE emission observed from reported InN nanorods 26 and epitaxial films 27 . Notefully, the emission intensity from the nano-necklace is stronger, and is tentatively attributed to the larger material size as well as muti-scattering inside one nano-necklace for three dimensional cavity-like light resonant 28 .…”

Section: Resultssupporting

confidence: 88%

Terahertz detectors arrays based on orderly aligned InN nanowires

Chen

Liu

et al. 2015

Sci Rep

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Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

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Section: Resultssupporting

confidence: 88%

Terahertz detectors arrays based on orderly aligned InN nanowires

Chen

Liu

et al. 2015

Sci Rep

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“…The effect of growth parameters of InN films such as the substrate temperature, RF power, and In/N flow ratio has been investigated to optimize sample quality [19]. Previous studies of InN deposition on oxide layer show that InN has the highly oriented in the c-axis direction [20]. The oxide buffer layer could be a suitable buffer layer for the growth of high-quality InN films.…”

Section: Introductionmentioning

confidence: 99%

Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF‐MOMBE with GZO and AlN Buffer Layers

Chen

Kuo

2012

Journal of Nanomaterials

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Wurtzite structure InN films were prepared on Si(100) substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) system. Ga-doped ZnO (GZO) and Amorphous AlN (a-AlN) film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL). XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

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Molecular beam epitaxy of low-bandgap InGaN

Boney

Bensaoula

2013

Molecular Beam Epitaxy

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Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy

Cited by 7 publications

References 20 publications

Terahertz detectors arrays based on orderly aligned InN nanowires

Terahertz detectors arrays based on orderly aligned InN nanowires

Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF‐MOMBE with GZO and AlN Buffer Layers

Molecular beam epitaxy of low-bandgap InGaN

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