Photoluminescence studies of isotopically enriched silicon

Karaiskaj, D.; Thewalt, M. L. W.; Ruf, T.; Cardona, M.

doi:10.1002/pssb.200301540

Cited by 9 publications

(8 citation statements)

References 52 publications

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“…25 Analysis of the TO-assisted transitions showed that P was the majority donor in all cases and that the concentration of B was typically 10x lower, consistent with the Hall data. dependence for the mobility data.…”

Section: Resultssupporting

confidence: 76%

High-Purity, Isotopically Enriched Bulk Silicon

Ager

Beeman

Hansen

et al. 2005

J. Electrochem. Soc.

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Section: Resultssupporting

confidence: 76%

High-Purity, Isotopically Enriched Bulk Silicon

Ager

Beeman

Hansen

et al. 2005

J. Electrochem. Soc.

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“…Studies have been made on Raman scattering from isotope superlattices, 1 on the indirect energy gap, 2 and on the electronic states of the shallow donors and acceptors. [3][4][5][6] Many of the deep centers created by radiation damage and ion implantation which produce photoluminescence in the near infrared spectral range ͑Ͼ6000 cm −1 ͒ have also been investigated. 7,8 To date, the only measurements made on local vibrational modes have been on interstitial oxygen 9 and bond-centered hydrogen.…”

Section: Introductionmentioning

confidence: 99%

Host isotope effects on midinfrared optical transitions in silicon

et al. 2005

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The effects of changing the host-lattice isotopes from natural silicon ͑approximately 28 Si͒ to 30 Si are reported for some of the important local vibrational modes ͑LVMs͒ observed in as-grown and electron-irradiated Czochralski silicon. We show that the quanta of the LVMs shift to lower energy in 30 Si compared to natural silicon by amounts varying from 3.5 to 27 cm −1 , in very good agreement with predictions from density functional theory. The 2767 cm −1 ͑"3.6 m"͒ transition of the negative divacancy is also found to shift to lower energy with increasing silicon mass, but we demonstrate, using an empirical method of predicting the shifts of zero-phonon lines, that the line is a zero-phonon line. The empirical method used is verified by analyzing the shifts of the very-low energy 3942 cm −1 vibronic band.

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“…There is intense interest in the properties of isotopically controlled silicon. 1 Optical studies have been carried out on isotope superlattices, 2 and studies of bulk silicon have included the effect of the host isotope on the localized modes of interstitial oxygen, 3 the indirect energy gap, 4 the properties of excitons bound to shallow donors and acceptors, 5 the ionization energy of the shallow centers, 6 and the groundstate splitting 6 and isotopically induced inhomogeneous linebroadening of transitions at shallow centers. 7 In this paper we present experimental data on the effect of changing the lattice isotope on the zero-phonon lines (ZPLs) and the local vibrational modes (LVMs) of some of the deep radiationinduced centers in silicon.…”

Section: Introductionmentioning

confidence: 99%

Lattice isotope effects on optical transitions in silicon

et al. 2004

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We report the changes with lattice isotope of the energies of the zero-phonon lines (ZPLs) and some of the local vibrational modes (LVMs) of commonly encountered radiation-damage centers in silicon. On changing from nat Si to 30 Si, ZPLs of the different centers shift by +0.8 to +1.8 meV. The carbon-oxygen "C" center is taken as the primary example. For this center, the measured changes in the frequencies of the LVMs in the electronic ground state of the center agree closely with the results of density functional theory (DFT). We suggest that the LVM frequencies in the excited state can be obtained from DFT calculations of the positive charge state. The effect on the ZPL is broken into three parts. The dependence of the ZPL on the isotopically induced change in the LVMs and in the lattice volume is shown to be small compared to the effects of the electron-phonon coupling to the continuum of lattice modes. This dominant effect can be found, in principle, from the temperature dependence of the energy of the ZPL, but data can only be measured over too small a temperature range. We suggest that an estimate of the isotope effects can be derived by rescaling the appropriate data for the indirect energy gap. This simple empirical approach reproduces the measured isotope shifts of the ZPLs of the "C" and "P" centers within ϳ10%, of the "I" and "T" centers within ϳ30%, and within a factor of 2 for the "G" center.

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Photoluminescence studies of isotopically enriched silicon

Cited by 9 publications

References 52 publications

High-Purity, Isotopically Enriched Bulk Silicon

High-Purity, Isotopically Enriched Bulk Silicon

Host isotope effects on midinfrared optical transitions in silicon

Lattice isotope effects on optical transitions in silicon

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