Photoluminescence studies on MBE grown Co-doped ZnO thin films fabricated through ion implantation and swift heavy ion irradiation

Abstract

a b s t r a c tThe temperature dependant photoluminescence of the Co-doped ZnO thin films, prepared by ion implantation on the MBE grown ZnO thin films followed by swift heavy ion irradiation, were investigated. The phenomenon of negative thermal quenching (NTQ), where the photoluminescence (PL) intensity increases with temperature, in contrast to the usual behavior of decrease in intensity with temperature, has been observed. The I 3 peak and the peaks (a, b, c, d, and e), corresponding to t 2g and e g levels of the crystal field split Co d orbitals exhibit the NTQ behavior. The NTQ temperature range 35-45 K observed in un-doped ZnO shifts towards lower temperature with the Co doping. The increased number of dopant related and/or the vibrational/rotational resonance states with lower activation energies, from which the thermal excitation of the electrons takes place to the initial state of the PL transition, are responsible for the NTQ behavior.

Ga-Sn Co-Doped ZnO Films via Sol-Gel Route

“…Deposition methods such as magnetron sputtering [14][15][16], pulsed laser deposition (PLD) [17][18][19], molecular beam epitaxy (MBE) [20][21][22], and metal organic chemical vapour deposition (MOCVD) [23][24][25] were commonly used to coat high quality ZnO films on substrates. However, due to the high equipment cost of the aforementioned methods, and with the concern of cost effectiveness in mind, sol-gel method has gained popularity in the recent years.…”

Metal-ion doped luminescent thin films for optoelectronic applications

“…[9][10][11][12] Luminescent thin lms have several advantages over powders in these applications, such as higher lateral resolution from smaller grains, better thermal stability, reduced outgassing rate, and better adhesion to the solid surface. [13][14][15] Luminescent thin lms can be prepared by a variety of deposition techniques, such as pulsed laser deposition (PLD), [16][17][18] sputtering, 19,20 molecular beam epitaxy (MBE), 21 spray pyrolysis, [22][23][24] sol-gel method, [25][26][27] etc. It is noticeable that the fabrication process in thin-lm luminescent devices is compatible with modern manufacturing technologies in microelectronic and optoelectronic industries.…”