Photoluminescence study of annealed nickel- and nitrogen-containing synthetic diamond

Kupriyanov, Igor N.; Гусев, В. А.; Borzdov, Yuri M.; Kalinin, Alexander; Palyanov, Yuri N.

doi:10.1016/s0925-9635(99)00122-3

Cited by 66 publications

(30 citation statements)

References 12 publications

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“…In some cases an additional HPHT annealing process is applied to enhance the formation probability of these centers [88,89]. It was also shown, that the NE4 defect, ascribed to a nickel atom in a di-vacancy [90,91], acts as nucleus for aggregation of nitrogen atoms.…”

Section: Transition Metalsmentioning

confidence: 99%

Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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Section: Transition Metalsmentioning

confidence: 99%

Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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“…This work reports photoluminescence (PL) study of the 1.660 eV system, namely the behaviour of its zero phonon line (ZPL) under uniaxial stress and at different sample temperatures. The peak at 1.660 eV has been observed using cathodoluminescence [5] and PL [2] in HPHT synthetic diamonds in the early annealing stages and its intensity decreases as the annealing temperature increases, vanishing at T>2000 K [2]. From PL excitation studies the 1.660 eV band has been related to the absorption band with ZPL at 2.427 eV and it was suggested that both occur at the same centre.…”

Section: Introductionmentioning

confidence: 99%

“…When Ni alloys are used as solvent/catalyst, Ni atoms incorporate in diamonds as substitutional and interstitial impurities. Annealing of these nitrogen-rich HPHT diamonds in the temperature range of 1500-1900 C results in several absorption and luminescence bands and EPR signals, some of them displaying a transitory behaviour [1][2][3]. It is thought that during annealing at temperatures of T > 1500 C Ni defects release interstitials which interact with nitrogen thus enhancing its aggregation [4].…”

Section: Introductionmentioning

confidence: 99%

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Nickel–nitrogen complexes in synthetic diamond: the 1.660eV luminescence system

Rino

Neves

Kanda

2003

Physica B: Condensed Matter

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“…Up to today, there are many different methods to study the inclusions related to transition-metal catalyst and graphite during diamond synthesis, such as thermal neutrons [5], microscopic photoluminescence spectroscopy [6][7][8], scanning X-ray analytical microscopy [9], electron paramagnetic resonance (EPR) [10,11], TEM [12,13] and so on.…”

Section: Introductionmentioning

confidence: 99%

Fracture behavior of HPHT synthetic diamond with micrometers metallic inclusions

He-sheng

Yuan-pei

et al. 2009

Front. Mater. Sci. China

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The fracture behavior of the diamond single crystals with metallic inclusions was investigated in the present paper. Single diamond crystals with metallic inclusions were formed by a special process with high pressure and high temperature (HPHT). The inclusions trapped in the diamond were characterized mainly to be metallic carbide of (Fe,Ni) 23 C 6 or Fe 3 C and solid solution of γ-(Fe,Ni) by transmission electronic microscopy (TEM). The grain size of the inclusions is about micrometers. The fracture characteristics of the diamond single crystals, after compression and heating, were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The fracture sections of the compressed and heated diamonds were found to be parallel to the (111) plane. The interface of the inclusions and diamond is deduced to be the key factor and the original region of the fracture formation. Mechanisms of the fracture behavior of the HPHT synthesized diamonds are discussed.

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Photoluminescence study of annealed nickel- and nitrogen-containing synthetic diamond

Cited by 66 publications

References 12 publications

Novel Single Photon Emitters Based on Color Centers in Diamond

Novel Single Photon Emitters Based on Color Centers in Diamond

Nickel–nitrogen complexes in synthetic diamond: the 1.660eV luminescence system

Fracture behavior of HPHT synthetic diamond with micrometers metallic inclusions

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