Photoluminescence Study of Bulk GaN Doped with Beryllium

Jaworek, M.; Wysmołek, A.; Kamińska, M.; Twardowski, A.; Boćkowski, M.; Grzegory, I.

doi:10.12693/aphyspola.108.705

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…The properties of the UVL Be band are the same as obtained earlier from the study of Be-doped GaN grown by MBE [7,9,11] or the high nitrogen pressure solution (HNPS) method. [10] In particular, the donor-acceptor-pair (DAP) peaks transform into the conduction band-acceptor (eA) peaks with increasing temperature (Figure 2). This transformation is typical for acceptors in GaN.…”

Section: The Uvl Be Bandmentioning

confidence: 99%

“…Photoluminescence (PL) studies have repeatedly shown that the Be Ga acceptor has a level shallower than Mg, yet the resultant GaN:Be material is commonly semi-insulating. [5][6][7][8][9][10] Previous reports on PL from Be-doped GaN are almost exclusively based on GaN grown by molecular beam epitaxy (MBE). Our systematic studies of MBE-grown GaN:Be samples revealed three Be-related PL bands: the ultraviolet luminescence (UVL Be ) band with a maximum at 3.38 eV, the yellow luminescence (YL Be ) band with a maximum at 2.2 eV, and the red luminescence (RL Be ) band with a maximum at 1.8 eV.…”

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confidence: 99%

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Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Reshchikov

Vorobiov

Andrieiev

et al. 2022

Physica Status Solidi (b)

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A systematic photoluminescence study of Be‐doped GaN grown by metal‐organic chemical vapor deposition is presented. All Be‐doped samples show the ultraviolet luminescence (UVLBe) band with a maximum at 3.38 eV and the yellow luminescence (YLBe) band with a maximum at ≈2.15 eV in GaN:Be having various concentrations of Be. The UVLBe band is attributed to the shallow state of the BeGa acceptor with a delocalized hole. The YLBe band is caused by a Be‐related defect, possibly the polaronic state of the BeGa acceptor with the charge transition level at 0.3 eV above the valence band. This broad band exhibits unusual properties. In particular, it always shows two steps in its thermal quenching. The second step at T ≈ 200 K is attributed to the emission of holes from the 0.3 eV level to the conduction band. The origin of the first step remains unexplained.

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Section: The Uvl Be Bandmentioning

confidence: 99%

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confidence: 99%

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Reshchikov

Vorobiov

Andrieiev

et al. 2022

Physica Status Solidi (b)

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Incorporation and Interaction of Co‐Doped Be and Mg in GaN Grown by Metal‐Organic Chemic Vapor Deposition

McEwen,

Rocco,

Meyers

et al. 2024

Physica Status Solidi (b)

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Despite recent advances in growth and characterization of GaN:Be, reliable conductive p‐type GaN:Be remains elusive. In this work, GaN is co‐doped with Be and Mg to improve the incorporation and ionization efficiency of both Be and Mg. Be and Mg are found to interact in complex ways rendering GaN:Be,Mg semi‐insulating. Rather than improving Be and Mg incorporation efficiency, there is an apparent mutual inhibition of incorporation when Be and Mg are co‐dopants. Furthermore, photoluminescence measurements indicate that the BeGa acceptor is reduced in particular, relative to the total [Be]. The same effect is not observed for Mg. From this, it is concluded that Mg preferentially incorporates into Ga lattice sites over Be, and excess Be that cannot incorporate into substitutional sites instead occupies interstitial sites. The interstitial Be acts as donor defect, which compensate Mg acceptors. This provides an explanation for the observed reduction in BeGa‐related luminescence intensity (without an associated decrease in [Be]) in GaN:Be with significant [Mg] content.

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Passivation of the beryllium acceptor in GaN and a possible route for p-type doping

Demchenko

Reshchikov

2021

Applied Physics Letters

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Using theory and experiment, we address a possible p-type doping route of GaN using the Be acceptor. Hybrid functional calculations suggest that straightforward incorporation of Be in GaN will likely lead to compensated high resistivity samples. In this case, beryllium interstitials and nitrogen vacancies are the most likely compensating donors. However, calculations also show that simultaneous incorporation of beryllium and hydrogen in the nitrogen-rich growth regime is likely to lead to the formation of neutral BeGa-Hi complexes. These complexes are energetically favorable and do not exhibit any transition levels in the bandgap. Subsequent annealing in hydrogen-free or nitrogen ambient will dissociate these complexes and activate shallow BeGa acceptors in GaN. Experimental measurements, where an ultraviolet photoluminescence band related to the shallow BeGa acceptor emerges after annealing the Be-doped GaN, confirm these findings.

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Photoluminescence Study of Bulk GaN Doped with Beryllium

Cited by 6 publications

References 9 publications

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Incorporation and Interaction of Co‐Doped Be and Mg in GaN Grown by Metal‐Organic Chemic Vapor Deposition

Passivation of the beryllium acceptor in GaN and a possible route for p-type doping

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