Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

Schittenhelm, P.; Gail, M.; Brunner, J.; Nützel, J. F.; Abstreiter, G.

doi:10.1063/1.114401

Cited by 184 publications

(87 citation statements)

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“…The exciting applications of nanosize islands, as well as their fundamentally interesting electronic and structural properties, have motivated many research groups to study island formation, attempting to understand the kinetic and thermodynamic factors determining the self-assembly process. Islands form spontaneously in many heteroepitaxial systems where the mismatch is large (above 1-2%), including InP/GaInP, InGaAs/GaAs and CdSe/ZnSe (Bennett et al, 1996;Carlsson et al, 1994;Ferrer et al, 1996;Kobayashi et al, 1996;Leon et al, 1995Leon et al, , 1997Leonard et al, 1993Leonard et al, , 1994Lubyshev et al, 1996;Madhukar et al, 1994;Moison et al, 1994;Ponchet et al, 1995;Reaves et al, 1996;Ruvimov et al, 1995;Snyder et al, 1991;Solomon et al, 1995Solomon et al, , 1996Xie et al, 1996;Xin et al, 1996), as well as Si/Ge and Ge/Si (Chen et al, , 1997Cunningham et al, 1991;Deelman et al, 1996;Eaglesham and Cerullo, 1990;Floro et al, 1997;Goryll et al, 1997;Hansson et al, 1993;Kamins et al, 1997;Knall and Pethica, 1992;Kohler et al, 1991;Krishnamurthy et al, 1991a,b;Maree et al, 1987;Medeiros-Ribeiro et al, 1998;Mo et al, 1990;Sakai and Tatsumi, 1993;Schittenhelm et al, 1995;Sumitomo et al, 1995a,b;…”

Section: Introductionmentioning

confidence: 97%

In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si

Ross

Tersoff

Reuter

et al. 1998

Microsc. Res. Tech.

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Section: Introductionmentioning

confidence: 97%

In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si

Ross

Tersoff

Reuter

et al. 1998

Microsc. Res. Tech.

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“…It has been shown that dislocation-free SiGe growth can be achieved using a higher temperature (≥600°C), and that the non-planar geometry is mainly responsible for the significant increase of the SiGe critical layer thickness. It has also been found that, compared to two-dimensional (2D) Si/SiGe NSs, the PL and EL quantum efficiency in 3D Si/SiGe NSs is higher (up to 1%), especially for T > 50 K (Cerdeira et al, 1972;Apetz et al, 1995;Schittenhelm et al, 1995;Schmidt et al, 1999b). Despite many successful demonstrations of PL and EL in the spectral range of 1.3-1.6 μm, which is important for optical fiber communications, the proposed further development of 3D Si/SiGe-based light emitters was discouraged by several studies, indicating a type II energy band alignment at Si/SiGe heterointerfaces (Van de Walle and Martin, 1986;Thewalt et al, 1997;Schittenhelm et al, 1998;El Kurdi et al, 2006), where the spatial separation of electrons (located in Si) and holes (localized in SiGe) (see 1) was thought to make carrier radiative recombination very inefficient.…”

Section: Quantum Dotsmentioning

confidence: 99%

Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

Lockwood

Baribeau

et al. 2016

Front. Mater.

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Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide-semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1−xGex nanostructures (NSs), which can emit light at wavelengths within the important optical communication wavelength range of 1.3-1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1−xGex NSs have prevented the attainment of efficient light-emitting devices, including the desired lasers. Thus, the engineering of Si/ Si1−xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range of 0.8-0.9 eV. In this paper, we assess how the nature of the interfaces between SiGe NSs and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors, such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for NS confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/ Ge NW diameter in the range 50-120 nm produce a clear PL signal associated with bandto-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1−xGex NSs incorporated into a Si0.6Ge0.4 wavy superlattice structure display PL of high intensity while exhibiting a characteristic decay time that is up to 1000 times shorter than that found in conventional Si/SiGe NSs. The non-exponential PL decay found experimentally in Si/SiGe NSs can be interpreted as resulting from variations in the separation distance between electrons and holes at the Si/SiGe heterointerface. The results demonstrate that a sharp Si/SiGe heterointerface acts to reduce the carrier radiative recombination lifetime and increase the PL quantum efficiency, which makes these SiGe NSs favorable candidates for future light-emitting device applications in CMOS technology.

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“…It has been shown that dislocation-free SiGe growth can be achieved using a higher temperature (≥600 o C), and that the non-planar geometry is mainly responsible for the significant increase of the SiGe critical layer thickness [5]. It has also been found that, compared to two-dimemensional (2D) Si/SiGe NSs, the PL and electroluminescence (EL) quantum efficiency in 3D Si/SiGe NSs is higher (up to ~1%), especially for T > 50 K [6][7][8][9]. Despite many successful demonstrations of PL and EL in the spectral range of 1.3-1.6 m, which is important for optical fiber communications, the proposed further development of 3D Si/SiGe based light emitters was discouraged by several studies indicating a type II energy band alignment at Si/SiGe heterointerfaces [10], where the spatial separation of electrons (located in Si) and holes (localized in SiGe) was thought to make carrier radiative recombination very inefficient.…”

mentioning

confidence: 91%

Self‐assembled silicon‐germanium nanostructures for CMOS compatible light emitters

Lockwood

Tsybeskov

2011

Phys. Status Solidi C

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To be commercially valuable, light emitters based on SiGe nanostructures should be efficient, fast, operational at room temperature, and be compatible with the CMOS technology. Also, the emission wavelength should match the optical waveguide low‐loss spectral region of 1.3–1.6 μm. Among other approaches, epitaxially‐grown Si/SiGe quantum dot/quantum well complexes produce efficient photoluminescence and electroluminescence in the required spectral range. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency and a long carrier radiative lifetime. The latest progress in the understanding of physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters for on‐chip optical interconnects is proposed. © Her Majesty the Queen in Right of Canada [2011]. Reproduced with the permission of the Minister of Industry

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Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

Cited by 184 publications

References 0 publications

In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si

In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si

Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

Self‐assembled silicon‐germanium nanostructures for CMOS compatible light emitters

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