Photoluminescence tomography as a method to image point-defect distributions in crystals: Nitrogen-vacancy pairs in synthetic diamonds

Enckevort, W.J.P. van; Lochs, H. G. M.

doi:10.1063/1.341212

Cited by 19 publications

(8 citation statements)

References 13 publications

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“…As shown in the CL map of figure 1, the sectors are relatively large and structured along the crystallographic directions. In comparison with the 'main' sector (A), the 'strip' sectors extending near the sample edges (B) are characterized by lower nitrogen concentration, while the sectors near the sample corners (C) contain high concentrations of impurities (N, Ni, Fe, etc), as confirmed by PL mapping [47,48].…”

Section: Methodsmentioning

confidence: 75%

Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

et al. 2013

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We report a systematic investigation on the spectral splitting of negatively charged, nitrogen-vacancy (NV − ) photoluminescent emission in single-crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a high-pressure-high-temperature diamond, clearly distinguishable spectral components in the NV − emission develop over a range of ∼4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV − centers for ensemble quantum information protocols. Gesellschaft large optical dipoles and, in the case of the negatively charged nitrogen-vacancy (NV − ) center, long-lived ground-state coherence [3].Although much of the interest in NV − -based QIP is centered on room-temperature processes and isolated centers, there is also considerable interest in applying ensemble QIP protocols to the optical transition of inhomogeneously broadened NV − centers. Indeed the dipole moment and transition frequency for NV − are comparable to that of rubidium, meaning that translation of protocols developed for vapor cells is natural. Protocols using ensembles were initially considered for the first NV − quantum computing [4,5] and optical quantum non-demolition experiments [6]. There have been observations of long-lived ground-state coherence [7], coherent population trapping [8], magnetometry [9] and magnetic coupling between NV − ensembles and superconducting circuits [10,11].Despite the interest in ensemble processing with NV − , there are major challenges to be overcome, which place NV − at a disadvantage when compared with atomic vapors. One of the largest problems is the inhomogeneous linewidth and the nature of this inhomogeneity. The inhomogeneous linewidth of the optical transitions in NV − typically varies with strain [12], implantation strategy [13,14] and electric field [15], leaving the job of controlling the linewidth as a major goal of NV − engineering. Coupled to this problem is that at room temperature, the linewidth appears to be dominated by spectral diffusion, although exceptional emitters with almost lifetime-limited emission can be discovered [16][17][18][19][20], and there are no reports of ensembles of purely homogeneously broadened NV − centers.Here we show a new approach to spectrally separating aligned subensembles of NV − . By engineering permanent strain fields into the diamond lattice through ion implantation, we demonstrate that it is possible to resolve the orientationally inequivalent NV − subensembles based upon their spectral properties. These results reveal new opportunities for the use of aligned, inhomogeneously broadened ensembles of NV − centers for QIP that is distinct from more traditional methods of applying external uniaxial strain to a lattice.In the study of defect-related optical transitions in cryst...

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Section: Methodsmentioning

confidence: 75%

Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

et al. 2013

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“…The concept of optical defects being incorporated in a specific growth sector is well documented (van Enckevort and Lochs, 1988;Collins et al, 1990;Lawson et al, 1996;Welbourn et al, 1996;Zaitsev, 2001). For instance, the NVcenter is preferentially incorporated in the {111} octahedral sector in HPHT synthetic diamonds (van Enckevort and Lochs, 1988;Zaitsev, 2001). In agreement with the study presented by van Enckevort and Lochs (1988), our results show that the NVcenter is most intense in the {111} octahedral growth sector (table 2).…”

Section: Discussionmentioning

confidence: 99%

Garnets from Madagascar with a Color Change of Blue-Green to Purple

Schmetzer¹,

Bernhardt²

1999

Gems & Gemology

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“…The above-mentioned growth macrosectors developed during the HPHT synthesis from a single seed, and depending on their orientation, they are characterized by different impurity concentrations. [48][49][50] Thus, it was assumed that the absence of observable sectors resulted in a uniform distribution of impurities within the sample.…”

Section: A Sample Preparation and Preliminary Fourier Transform Infrmentioning

confidence: 99%

Systematic study of defect-related quenching of NV luminescence in diamond with time-correlated single-photon counting spectroscopy

et al. 2013

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We report on the systematic characterization of photoluminescence (PL) lifetimes in NV − and NV 0 centers in 2-MeV H + -implanted type Ib diamond samples by means of a time-correlated single-photon counting (TCSPC) microscopy technique. A dipole-dipole resonant energy transfer model was applied to interpret the experimental results, allowing a quantitative correlation of the concentration of both native (single substitutional nitrogen atoms) and ion-induced (isolated vacancies) PL-quenching defects with the measured PL lifetimes. The TCSPC measurements were carried out in both frontal (i.e., laser beam probing the main sample surface along the same normal direction of the previously implanted ions) and lateral (i.e., laser beam probing the lateral sample surface orthogonally with respect to the same ion implantation direction) geometries. In particular, the latter geometry allowed a direct probing of the centers lifetime along the strongly nonuniform damage profiles of MeV ions in the crystal. The extrapolation of empirical quasiexponential decay parameters allowed the systematic estimation of the mean quantum efficiency of the centers as a function of intrinsic and ion-induced defect concentration, which is of direct relevance for the current studies on the use of diamond color centers for photonic applications.

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Photoluminescence tomography as a method to image point-defect distributions in crystals: Nitrogen-vacancy pairs in synthetic diamonds

Cited by 19 publications

References 13 publications

Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

Splitting of photoluminescent emission from nitrogen–vacancy centers in diamond induced by ion-damage-induced stress

Garnets from Madagascar with a Color Change of Blue-Green to Purple

Systematic study of defect-related quenching of NV luminescence in diamond with time-correlated single-photon counting spectroscopy

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