Photoluminescence under high-electric field of PbS quantum dots

Abstract

The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.

Zeta Potential-Based Control of CdSe/ZnS Quantum Dot Photoluminescence

“…The sensitivity of semiconductor quantum dot (QD) photoluminescence (PL) to the electric field arises mainly from the field-induced dissociation of free or bound excitons as well as the quantum-confined Stark effect (QCSE). − Commonly, the application of an external electric field results in strong PL quenching, which is normally a parasitic effect in the electroluminescence, but can be utilized, for example, in biology for membrane potential detection in cells. , Though the application of an external electric field is required to observe the field-induced PL quenching; a similar effect can also be provoked by the nearby localized charges. Such charges can be associated with specific QD surface ligands or ions in the solution.…”