Photoluminescent discovery of the impurity–band non-equilibrium current carriers condensation in Ge:Sb

Chiba, M.; Fradkov, V.A.; Karuzskii, A. L.; Perestoronin, A. V.; Zhurkin, B.G.

doi:10.1016/s0921-4526(01)00463-x

Cited by 4 publications

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“…Sharp exciton lines have been observed earlier in the spectra of "normal" PL of the Zn 1-x Mg x Se mixed crystals [8], but are not observed in their anti-Stokes luminescence. This behaviour can be explained by a difference in the charge state of these materials [15] determined mainly by deep-level centers under the bulk photo excitation conditions when the density of photogenerated current carriers is much less than that achieved under the "normal" near surface photo excitation.…”

Section: Results and Discussion Inmentioning

confidence: 99%

Anti‐Stokes luminescence in ternary Zn_1–_xMg_xSe compounds at liquid helium temperature

Белов

Firszt

Горелик

et al. 2003

phys. stat. sol. (c)

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Investigations of photoluminescence and Raman scattering in ternary Zn 1-x Mg x Se compounds at 4.2 K were performed both in the Stokes and anti-Stokes regions using the cw laser excitation with various wavelengths in the transparency band of the crystals. The anti-Stokes luminescence was observed for the first time in ternary Zn 1-x Mg x Se compounds. We suggest that the anti-Stokes emission is generated by the twostep excitation via deep-level centers. The low-temperature anti-Stokes photoluminescence is found to be a common property of the wide gap semiconductors and can probe the spatial distribution profiles of impurities in a volume of crystals.Introduction One of the exciting topics of impurity and defect state physics is anti-Stokes luminescence [1 -4]. The volume anti-Stokes PL (APL) can be due to a two step optical excitation involving native defects and/or impurity centers. The manifestation of anti-Stokes secondary radiation is known in condensed matter when excited by the intense pulsed source of light. In this case, the following processes can be responsible for the anti-Stokes emission: 1. two-photon excited luminescence, 2. hyperRaman and hyper-Raleigh scattering, 3. second-and mixed-harmonic generation, and 4. multiphoton processes. Taking into account the relatively low intensity of excitation sources used in our experiments the latter mechanisms will be beyond the scope of further considerations.The anti-Stokes luminophors are recently known [2][3][4] which have the anomalously high intensity of the APL. A special class of the anti-Stokes luminophors is represented by single crystals or glasses with rare earth elements. It has been found that at low temperatures almost every studied crystal, doped or undoped intentionally, and even high-purity II -VI and III -V compounds and other condensed dielectrics possess APL bands of more or less strong intensity [1, 3, 5 -6].The purpose of this paper is to analyse the impurity and defect properties in bulk ZnSe and Zn 1-x Mg x Se crystals by means of luminescence spectroscopy and Raman scattering at T = 4.2 K. The base compound ZnSe is the direct-gap semiconductor with the band gap of 2.67 eV at RT and 2.818 eV at 4.2 K [7] and is characterised by the spatial symmetry group T

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Section: Results and Discussion Inmentioning

confidence: 99%

Anti‐Stokes luminescence in ternary Zn_1–_xMg_xSe compounds at liquid helium temperature

Белов

Firszt

Горелик

et al. 2003

phys. stat. sol. (c)

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Белов

Firszt

Горелик

et al. 2003

Journal of Russian Laser Research

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Secondary anti-stokes emission from the bulk of gallium phosphide at 4.2 K

2002

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Photoluminescent discovery of the impurity–band non-equilibrium current carriers condensation in Ge:Sb

Cited by 4 publications

References 10 publications

Anti‐Stokes luminescence in ternary Zn_1–_xMg_xSe compounds at liquid helium temperature

Anti‐Stokes luminescence in ternary Zn_1–_xMg_xSe compounds at liquid helium temperature

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Secondary anti-stokes emission from the bulk of gallium phosphide at 4.2 K

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Photoluminescent discovery of the impurity–band non-equilibrium current carriers condensation in Ge:Sb

Cited by 4 publications

References 10 publications

Anti‐Stokes luminescence in ternary Zn1–xMgxSe compounds at liquid helium temperature

Anti‐Stokes luminescence in ternary Zn1–xMgxSe compounds at liquid helium temperature

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Secondary anti-stokes emission from the bulk of gallium phosphide at 4.2 K

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Anti‐Stokes luminescence in ternary Zn_1–_xMg_xSe compounds at liquid helium temperature

Anti‐Stokes luminescence in ternary Zn_1–_xMg_xSe compounds at liquid helium temperature