Photon cutting for excitation of Er<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mrow /><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:math>ions in SiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>sensitized by Si quantum dots

Ha, Nam Chul; Cueff, Sébastien; Dohnalová, Kateřina; Trinh, M. Tuan; Labbé, Christophe; Rizk, R.; Yassievich, I. N.; Gregorkiewicz, T.

doi:10.1103/physrevb.84.241308

Cited by 15 publications

(11 citation statements)

References 30 publications

(28 reference statements)

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“…Besides the exciton-ion and ion-ion ET in a single host as discussed above, the interactions between ion and QDs or between two QDs also leads to similar optical ET as long as energy resonance condition is fulfilled. [158][159][160] It was found that Er 3+ emission can be produced by resonant pumping into the bound exciton state of the donor (Si QDs). Obviously, this is different from the previous case of host sensitized luminescence by semiconductors where RE ions are believed to occupy the cationic site in QDs.…”

Section: Qd-ion Etmentioning

confidence: 99%

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

2015

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Transfer of energy occurs endlessly in our universe by means of radiation. Compared to energy transfer (ET) in free space, in solid state materials the transfer of energy occurs in a rather confined manner, which is usually mediated by real or virtual particles, including not only photons, but also electrons, phonons, and excitons. In the present review, we discuss the recent advances in optical ET by resonance mediated with photons in solid materials as well as their nanoscale counterparts, with focus on the photoluminescence behavior pertaining to ET between optically active centers, such as rare earth (RE) ions. This review begins with a brief discussion on the classification of optical ET together with an overview of the theoretical formulations and experimental method for the examination of ET. We will then present a comprehensive discussion on the ET in practical systems in which normal photoluminescence, upconversion and quantum cutting resulted from ET involving metal ions, QDs, organic species, 2D materials and plasmonic nanostructures. Diverse ET systems are therefore simply categorized into cases of ion-ion interactions and non-ion interactions. Special attention has been paid to the progress in the manipulation of spatially confined ET in nanostructured systems including core-shell structures, as well as the ET in multiple exciton generation found in QDs and organic molecules, which behave quite similarly to resonance ET between metal ion centers. Afterwards, we will discuss the broad spectrum of applications of ET in the aforementioned systems, including solid state lighting, solar energy utilization, bio-imaging and diagnosis, and sensing. In the closing part, along with a short summary, we discuss further research focus regarding the problems and possible future directions of optical ET in solids.

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Section: Qd-ion Etmentioning

confidence: 99%

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

2015

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“…The study presented here complements a recent work focused on PL quantum yield of SRO:Er 3þ material under similar excitation conditions. 18 We find profound differences in the fast dynamic of the visible PL with respect to the high energy optical excitation regime which we attribute to a decrease of the energy transfer efficiency and/ or decrease of excitation to higher (than first) excited states of Er 3þ . We demonstrate that the energy transfer to a higher energy state of Er 3þ ions ceases to be effective for photon energies between 2.1 and 1.8 eV (0.7-0.55 eV of pump excess energy with respect to the energy of 4 I 11/2 state).…”

Section: Discussionmentioning

confidence: 71%

“…13,14 Excitation at longer wavelengths (lower energies), where the absorption cross section of these two materials becomes comparable, may provide a valuable insight in the energy transfer mechanism. 11,[15][16][17][18] …”

Section: Introductionmentioning

confidence: 99%

Silicon nanocluster sensitization of erbium ions under low-energy optical excitation

Prtljaga

Navarro-Urriós²,

Pitanti³

et al. 2012

Journal of Applied Physics

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Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon J. Appl. Phys. 111, 094910 (2012) Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantumwell structure Appl. Phys. Lett. 100, 141905 (2012) Capability of photoluminescence for characterization of multi-crystalline silicon J. Appl. Phys. 111, 073504 (2012) Investigation of defect states in heavily dislocated thin silicon films J. Appl. Phys. 111, 053706 (2012) Additional information on J. Appl. Phys. The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the first excited state ( 4 I 13/2 ) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state ( 4 I 13/2 ) has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm-680 nm). V C 2012 American Institute of Physics.

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“…Moreover, in that range also an alternative process is enabled, when a hot-carrier excites a nearby Er 3þ ion into a still higher excited state ( 4 I 9/2 or higher), which subsequently shares part of its energy with another proximal Er 3þ . 35 This process is a reversal of the concentration quenching, well known for heavily Er-doped materials. 36 Therefore, instead of direct excitation of three Er 3þ ions from Si NC, there appears an indirect excitation by energy exchange between Er 3þ ions.…”

Section: "Fast" Excitation Processmentioning

confidence: 94%

Step-like increase of quantum yield of 1.5 μm Er-related emission in SiO2 doped with Si nanocrystals

Saeed

Jong

Gregorkiewicz

2015

Journal of Applied Physics

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We investigate the excitation dependence of the efficiency of the Si nanocrystals-mediated photoluminescence from Er3+ ions embedded in a SiO2 matrix. We show that the quantum yield of this emission increases in a step-like manner with excitation energy. The subsequent thresholds of this characteristic dependence are approximately given by the sum of the Si nanocrystals bandgap energy and multiples of 0.8 eV, corresponding to the energy of the first excited state of Er3+ ions. By comparing differently prepared materials, we explicitly demonstrate that the actual values of the threshold energies and the rate of the observed increase of the external quantum yield depend on sample characteristics—the size, the optical activity and the concentration of Si nanocrystals as well Er3+ ions to Si nanocrystals concentration ratio. In that way, detailed insights into the efficient excitation of Er3+ ions are obtained. In particular, the essential role of the hot-carrier-mediated Er excitation route is established, with a possible application perspective for highly efficient future-generation photovoltaics.

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Photon cutting for excitation of Er3+ions in SiO2sensitized by Si quantum dots

Cited by 15 publications

References 30 publications

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

Silicon nanocluster sensitization of erbium ions under low-energy optical excitation

Step-like increase of quantum yield of 1.5 μm Er-related emission in SiO2 doped with Si nanocrystals

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