Photon echoes in single- and trilayer semiconductor films of different nanosized thicknesses and their properties

Попов, И. И.; Vashurin, N. S.; Putilin, S. É.; Степанов, С. А.; Сидорова, В. Т.; Sushentsov, N. I.

doi:10.3103/s106287381402018x

Bull. Russ. Acad. Sci. Phys.

2014

DOI: 10.3103/s106287381402018x

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Photon echoes in single- and trilayer semiconductor films of different nanosized thicknesses and their properties

И. И. Попов

N. S. Vashurin

S. É. Putilin

et al.

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Cited by 6 publications

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“…So far, the coherent optical properties of ZnO were studied on free excitons with short coherence times up to few ps [9][10][11][12]. Optical excitation with spectrally broad femtosecond pulses was implemented and, consequently, quantum beats between various exciton states as well as strong many body interactions were demonstrated [10,11].…”

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Time-resolved photon echoes from donor-bound excitons in ZnO epitaxial layers

et al. 2017

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The coherent optical response from 140 nm and 65 nm thick ZnO epitaxial layers is studied using transient four-wave-mixing spectroscopy with picosecond temporal resolution. Resonant excitation of neutral donor-bound excitons results in two-pulse and three-pulse photon echoes. For the donorbound A exciton (D 0 XA) at temperature of 1.8 K we evaluate optical coherence times T2 = 33−50 ps corresponding to homogeneous linewidths of 13 − 19 µeV, about two orders of magnitude smaller as compared with the inhomogeneous broadening of the optical transitions. The coherent dynamics is determined mainly by the population decay with time T1 = 30 − 40 ps, while pure dephasing is negligible in the studied high quality samples even for strong optical excitation. Temperature increase leads to a significant shortening of T2 due to interaction with acoustic phonons. In contrast, the loss of coherence of the donor-bound B exciton (D 0 XB) is significantly faster (T2 = 3.6 ps) and governed by pure dephasing processes.

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Time-resolved photon echoes from donor-bound excitons in ZnO epitaxial layers

et al. 2017

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Study of the trion spectral lines broadening in the thin Si(p)/Si(b)/ZnO film caused by the exciton-phonon interaction and other factors

et al. 2019

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Experiments were carried out to study the contribution of the phonon wing to the uniform width of exciton states localized at room temperature on surface defects of the crystal lattice of thin single-layer and three-layer films. Technological studies were carried out to reproduce the parameters of a three-layer thin textured Si (P) / Si (B) / ZnO film to create a technology for the production of femtosecond time interval recorders based on the non-Faraday rotation of the polarized vector of the stimulated photon echo. The results of technological methods for studying the physics of the formation of trion states are discussed.Currently, much attention of scientists around the world is paid to the development of original technologies for creating quantum-dimensional structures, promising when creating new nanoelectronic devices and new principles for processing information at room temperature based on them. Along with quantum dots, the authors of [1][2][3][4] show the prospects of using nanoscale-sized zones on the surface of semiconductor fibers for this purpose, obtained by magnetron sputtering of thin films on glass substrates. Inside these zones, surface defects localized in them exist. At exciton states localized at these defects, photon echo signals were obtained, with the help of which it was established that the relaxation time of these states is greater than a few picoseconds. Such values of relaxation times make it promising to use thin films in the construction of nanoelectronic devices.To obtain reliable information using nanoelectronic devices, it is necessary to ensure technological reproducibility of the resonance medium parameters of these devices. This work provides a block diagram of the implementation of magnetron sputtering technology for thin films. The relevance of the manufacture of such films has increased. In connection with the discovery in the three-layer film of Si(P)/Si(B)/ZnO the effect of non-Faraday rotation of the plane of polarization of the stimulated photon echo (SPE) [5]. Moreover, based on it, on-line registration of femtosecond time intervals [6] is implemented (provided that the shortest time intervals recorded today are about 1 ps). As a result, the development of a technology for producing three-layer thin textured with reproducible parameters and the study of the mechanisms of formation of trion states (charged exciton states) in them become popular. Table 1 shows the results of optimization of the parameters of the technological process of obtaining these films. The possibility of obtaining a demonstration model of a resonant medium for studying the physics of the formation of trion states is reported. In

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Fabrication and study of thin functional films for optoelectronics and lighting

Попов

Vashurin

Putilin

et al. 2014

Bull. Russ. Acad. Sci. Phys.

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Photon echoes in single- and trilayer semiconductor films of different nanosized thicknesses and their properties

Cited by 6 publications

References 2 publications

Time-resolved photon echoes from donor-bound excitons in ZnO epitaxial layers

Time-resolved photon echoes from donor-bound excitons in ZnO epitaxial layers

Study of the trion spectral lines broadening in the thin Si(p)/Si(b)/ZnO film caused by the exciton-phonon interaction and other factors

Fabrication and study of thin functional films for optoelectronics and lighting

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