Photon Emission of Electrons in a Crystalline Undulator

Channeling and Radiation in Periodically Bent Crystals

“…4.14 correspond to the dependences a = a(λ u ) obtained several fixed (indicated) values of the bending parameter C consistent with the channeling condition in PBCh,-the first equation in the system (4.60). 3, the CU with λ u within this range can be produced by means of surface deformations [43,55,[117][118][119]201] as well as by growing periodically bent crystalline structures [30,31,43]. The curved lines illustrate the dependences a = a(λ u ) calculated for the fixed values (as indicated in the legends) of the number of undulator periods within the dechanneling length, N d = L d (C)/λ u .…”

“…However, later on it was shown [266,267] that an electron-based CU is a also a feasible device for high-energy (ε > 10 GeV) electron beams. As of now (the year 2011), several experiments related to the propagation of an electron beam with ε ≈ 1 GeV have been carried out at Mainz Microtron utility [29][30][31]. As of now (the year 2011), several experiments related to the propagation of an electron beam with ε ≈ 1 GeV have been carried out at Mainz Microtron utility [29][30][31].…”

“…In the cited paper and in more recent ones [263,264], results of numerical simulations of electron and positron channeling as well as of the emission spectra were reported for straight, uniformly bent and periodically bent silicon crystal.Channeling along Si (110) and Si(111) crystallographic planes are studied for the projectile energies MeV which correspond to the experimental conditions at the Mainz Microtron (Germany) [29][30][31] .…”

“…So far, the attempts have not been successful due various reasons. 1.1. However, quite recently [30,31] the first signatures showing evidence for the CUR were observed using electrons in graded composition strained layers, Si 1−x Ge x , arranged in a superlattice as described in [185,187,218], at the beam energies 195-855 MeV at the MAinz MIcrotron (MAMI) facility. 7.…”

Radiation emission by electrons channeling in bent silicon crystals

“…These include the attempts made [32] or planned to be made [33,34] to detect the radiation from a positron-based crystalline undulator. More recently, a series of the experiments with straight, bent and periodically bent crystals have been carried out with 195-855 MeV electron beams at the Mainz Microtron (Germany) facility [35][36][37]. The crystalline undulators, used in the experiment, were manufactured in Aarhus University (Denmark) using the molecular beam epitaxy technology to produce strainedlayer Si 1−x Ge x superlattices with varying germanium content [38,39].…”