Photostimulable luminescence (PSL) nanophosphors, which
exhibit
superior features including controllable energy storage and efficient
photon release upon light stimulation, are desirable for optical signal
storage. However, trap tuning of the storage phosphor remains a great
challenge. Herein, the PSL of Zn2GeO4:Mn2+ nanophosphors is enhanced via creating deep traps through
nonequivalent Pr3+ doping. The possible enhanced mechanisms
are analyzed combined with doping models using the first-principles
theory. A mechanism is proposed based on changing the coordination
environment of Mn2+, creating deep traps and tuning the
band gap structure, and thus providing the chance for electrons’
photoionization and PSL generation. As a result, the prepared nanophosphors
demonstrate the superior functionalities for optical signal storage.
This work not only offers an insight into defect engineering through
doping strategies for developing PSL materials but also supplies a
good candidate for optical information storage.