Photon helicity driven surface photocurrent in CuSe films

Михеев, Г. М.; Kogai, V. Ya.; Mogileva, T. N.; Mikheev, K. G.; Saushin, A. S.; Svirko, Yu. P.

doi:10.1063/1.5109069

Cited by 16 publications

(8 citation statements)

References 34 publications

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“…Our experiments show that in the studied CuSe/t-Se film, the dependences of the photovoltage on the polarization and incidence angle of the excitation beam well correspond to those reported in polycrystalline CuSe 31 and CuSe/amorphous Se 32,33…”

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confidence: 82%

“…[21][22][23] This second-order nonlinear optical phenomenon, which was experimentally studied in 22,24,25 , can be observed in 2D layered materials, along with other nonlinear optical effects. [26][27][28][29][30] We have recently demonstrated that the SPGE dominates the photoresponse of the semitransparent stoichiometric CuSe 31 and nanocomposite CuSe/Se films. [32][33][34] In the transverse configuration, when the photocurrent at the irradiated interface flows perpendicular to the incidence plane, both linear and circular SPGE photocurrents are permitted by the symmetry.…”

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confidence: 99%

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Helicity dependent temporal profile of the semiconductor thin film photoresponse

Михеев

Fateev

Kogai

et al. 2021

Applied Physics Letters

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We demonstrate that the transverse photovoltage pulses generated in the thin CuSe/Se semiconductor nanocomposite film irradiated by circularly and linearly polarized femtosecond laser beams have different durations indicating the dependence of the relaxation time of the photogenerated carriers on their spin. For the linearly polarized excitation beam, the photovoltage is a unipolar pulse that reverses polarity when the polarization azimuth changes sign, while its duration is polarization independent. For the left-and right-circularly polarized excitation beams, the photovoltage pulses are also unipolar having the same amplitude and duration but the opposite polarities. However, the temporal profile of the photoresponse changes drastically when the excitation beam is elliptically polarized. Specifically, it can be either a unipolar or bipolar pulse depending on the degree of the circular polarization of the excitation beam. We show that the observed helicity-sensitive temporal profile of the photoresponse originates from the interference of photocurrents generated in the subsurface layer of the film due to the linear and circular surface photogalvanic effects.The growing interest in the effects of chirality in the light-matter interaction has attracted attention to the photogalvanic effect that manifests itself as the generation of the polarization-sensitive dc current in noncentrosymmetric crystals. 1 In chiral media, the amplitude and direction of this photocurrent can be controlled by the degree of the circular polarization (helicity) of the excitation beam. 2 Such a "circular" photocurrent flows in opposite directions for the leftand right-circularly polarized excitation beams and may originate from the excitation and transport of the spin-polarized electrons. It is usually accompanied by the so-called linear photocurrent, which does not depend on the helicity of the excitation beam and is associated with spin-independent electron transport. Both circular and linear photocurrents can be observed in two-dimensional structures, in which the inversion symmetry is lifted by the interface. 3 The circular photocurrent has been extensively studied in gyrotropic bulk crystals [4][5][6][7][8] , quantum wells, two-dimensional materials, and thin films. [9][10][11][12][13][14][15][16][17][18][19][20] Generation of the circular and linear photocurrents in the vicinity of the interface can occur due to the surface photogalvanic effect (SPGE), which is associated with diffuse scattering of the

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confidence: 82%

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confidence: 99%

Helicity dependent temporal profile of the semiconductor thin film photoresponse

Михеев

Fateev

Kogai

et al. 2021

Applied Physics Letters

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“…The theory of the SPGE has been developed in references [2,7,8]. Experimentally SPGE has been demonstrated in gallium arsenide [9], copper crystal [6], and CuSe films [10,11]. Usually, SPGE is accompanied by the PDE and bulk photogalvanic effect (for example, see references [6,12,13]).…”

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confidence: 99%

The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite

et al. 2021

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We performed the investigation of the polarization-sensitive photocurrent generated in silver-palladium metal-semiconductor nanocomposite films under irradiation with nanosecond laser pulses at the wavelength of 2600 nm. It is shown that in both the transverse and the longitudinal configuration, the surface photogalvanic (SPGE) and photon drag effects (PDE) contribute to the observed photocurrent. However, the temporal profile of the transverse photocurrent pulse is monopolar at any polarization and angle of incidence, while the temporal profile of the longitudinal photocurrent pulse depends on the polarization of the excitation beam. Specifically, the irradiation of the film with the s-polarized excitation beam produces a monopolar photoresponse, while at p-polarized excitation, the photoresponse is bipolar, having a short front and long tail. Obtained experimental results are in agreement with the developed phenomenological theory, which describes transverse and longitudinal photocurrents due to SPGE and PDE in terms of relevant second-order nonlinear susceptibilities and allows us to obtain their dependences on the angle of incidence and polarization of the excitation laser beam. The pronounced dependence of the photocurrent on the angle of incidence and polarization of the excitation beam opens avenues toward the development of polarization- and position-sensitive detectors for industrial and space applications.

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“…The preparation and characterization of binary [1][2][3][4][5][6], ternary [7][8][9][10], quaternary [11][12][13] and pentanary thin films [14][15][16][17][18] have been reported. In general, these films are produced using various physical and chemical deposition techniques [19], each having its own advantages and limitations.…”

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confidence: 99%

Fabrication of Cu4SnS4 Thin Films: Α Review

Soonmin

2020

Eng. Technol. Appl. Sci. Res.

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Ternary compounds such as Cu4SnS4 thin films can be deposited onto glass substrates by various deposition methods: electrodeposition, chemical bath deposition, successive ionic layer adsorption and reaction, and evaporation techniques. Cu4SnS4 films could be used in solar cell applications because of their suitable band gap and large absorption coefficient. This paper reviews previous researches on Cu4SnS4 thin films. X-ray diffraction showed that the obtained films are orthorhombic in structure and polycrystalline in nature. Cu4SnS4 films exhibited p-type electrical conductivity and indicated band gap values in the range of 0.93 to 1.84eV.

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Photon helicity driven surface photocurrent in CuSe films

Cited by 16 publications

References 34 publications

Helicity dependent temporal profile of the semiconductor thin film photoresponse

Helicity dependent temporal profile of the semiconductor thin film photoresponse

The Surface Photogalvanic and Photon Drag Effects in Ag/Pd Metal-Semiconductor Nanocomposite

Fabrication of Cu4SnS4 Thin Films: Α Review

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