Photon localization and lasing in disordered<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>GaN</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>As</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>optical superlattices

Bq, Sun; Ds, Jiang

doi:10.1103/physrevb.73.195112

Cited by 9 publications

(7 citation statements)

References 21 publications

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“…The CINEB method [17] was run with five images, and the quick-min optimizer was used to minimize all images along the band collectively with the forces less than 0.002 eV A ˚-1 . We also examined the GSFEs with the embedded atom method (EAM) potentials developed by Liu et al [18] and Sun et al [19] and the modified embedded atom method (MEAM) [20], for the sake of future molecular dynamics simulations.…”

mentioning

confidence: 99%

Basal‐Plane Stacking‐Fault Energies of Mg: A First‐Principles Study of Li‐ and Al‐Alloying Effects

Jin

Han

et al. 2011

Supplemental Proceedings

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Alloying effects due to Li and Al were examined in terms of generalized stacking-fault energies (GSFEs) associated with basal planes of hexagonal close-packed Mg. The GSFE profiles were obtained using a first-principles technique in combination with climbing-image nudged elastic band methods. Our results show that Li alloying can facilitate dislocation-mediated processes while sequential faulting across basal planes becomes favorable with Al alloying. Such a difference is attributed to the fact that the two alloying elements tend to form different types of bond critical points in Mg.

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mentioning

confidence: 99%

Basal‐Plane Stacking‐Fault Energies of Mg: A First‐Principles Study of Li‐ and Al‐Alloying Effects

Jin

Han

et al. 2011

Supplemental Proceedings

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“…The other is the In-Ga structure, which consists of four In atoms in the first layer and three Ga atoms in the second layer. The relative stability between these surface structures is determined by the surface formation energy γ surf given by [13,14]…”

Section: A Ab-initio Calculationmentioning

confidence: 99%

“…The allowable energy ranges of µ In and µ Ga are determined by the heat of formation in bulk InN and GaN, respectively. The calculated heat of formation for InN (GaN) is 0.32 eV (1.20 eV) [13][14][15]. Furthermore, in order to study nitrogen incorporation on the surface with metal layers, we calculate surface phase diagrams as functions of temperature and pressure.…”

Section: A Ab-initio Calculationmentioning

confidence: 99%

Theoretical Investigations for the Formation of InN/GaN(0001) Heterostructures

Ito

Akiyama

Nakamura

et al. 2014

e-J. Surf. Sci. Nanotechnol.

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The formation processes of InN/GaN heterostructures on GaN(0001) substrate are investigated by means of our ab initio-based approach and Monte Carlo (MC) simulations. Our ab initio calculations reveal that even under Ga-rich conditions the pseudo-(1×1) surface consisting of In in the first layer and Ga in the second layer is more stable than that of Ga in the first layer and In in the second layer. Furthermore, the calculated surface phase diagrams demonstrate that the pseudo-(1×1) surface with In-Ga metal layers can incorporate 2.3 monolayers (MLs) of N atoms under growth conditions. The MC simulations using ab initio calculation data imply that both InGaN alloy and InN/GaN heterostructure can be formed depending on the growth conditions, consistent with the experimental results. On the basis of these findings, the stability of these structures is discussed in terms of the strain accumulation in the resultant structures.

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“…A collection of independent individuals that move, reproduce and die may undergo, under certain circumstances, wild fluctuations at the local and global scales, inducing a strongly non-Poissonian spatial patchiness: this phenomenon, dubbed 'clustering', has been often observed in the context of life sciences, including the spread of epidemics [1,2,3], the growth of bacteria on Petri dishes [4,5], the dynamics of ecological communities [6,7], and the mutation propagation of genes [8,9]. The key ingredient behind clustering is the asymmetry between death occurring everywhere and birth being only possible close to a parent particle; particle diffusion has a smoothing effect on the wild spatial patterns induced by the parent-child correlations [10].…”

Section: Introductionmentioning

confidence: 99%

Patchy nuclear chain reactions

Dumonteil¹,

Bahran²,

Cutler³

et al. 2020

Preprint

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Stochastic fluctuations of the neutron population within a nuclear reactor are typically prevented by operating the core at a sufficient power, since a deterministic behavior of the neutron population is required by automatic safety systems to detect unwanted power excursions. Recent works however pointed out that, under specific circumstances, non-Poissonian patterns could affect neutron spatial distributions. This motivated an international program to experimentally detect and characterize such fluctuations and correlations, which took place in 2017 at the Rensselaer Polytechnic Institute Reactor Critical Facility. The main findings of this program will indeed unveil patchiness in snapshots of neutron spatial distributions -obtained with a dedicated numerical twin of the reactor-that support this first experimental characterization of the 'neutron clustering' phenomenon, while a stochastic model based on reaction-diffusion processes and branching random walks will reveal the key role played by the reactor intrinsic sources in understanding neutron spatial correlations.

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Photon localization and lasing in disorderedGaNxAs1−xoptical superlattices

Abstract: We propose an approach to fabricate a disordered optical superlattice using microcracking faces in GaN x As 1−x epilayers. Laser action is observed and the emission exhibits random laser behaviors. A transfermatrix simulation suggests photon localization occurs at the lasing modes.

Cited by 9 publications

References 21 publications

Basal‐Plane Stacking‐Fault Energies of Mg: A First‐Principles Study of Li‐ and Al‐Alloying Effects

Basal‐Plane Stacking‐Fault Energies of Mg: A First‐Principles Study of Li‐ and Al‐Alloying Effects

Theoretical Investigations for the Formation of InN/GaN(0001) Heterostructures

Patchy nuclear chain reactions

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