Photonic Artificial Synapses: Photonic Organolead Halide Perovskite Artificial Synapse Capable of Accelerated Learning at Low Power Inspired by Dopamine‐Facilitated Synaptic Activity (Adv. Funct. Mater. 5/2019)

Ham, Seonggil; Choi, Sung Chul; Cho, Haein; Na, Seok‐In

doi:10.1002/adfm.201970031

Cited by 47 publications

(60 citation statements)

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“…Particularly, photonic synapse devices have received attention because they have several advantages compared to the electronic synapse devices, such as wide bandwidth, low crosstalk, and low power consumption characteristics 18–28. Therefore, researchers have attempted to mimic synaptic behaviors by utilizing optical stimulation and photonic synapse devices have been realized with various materials such as carbon nanotubes,29,30 oxide semiconductors,18,19,25,31,32 perovskite quantum dots,21,33 2D materials,23,24,27,28,34,35 and hybrid perovskites 20,26,36. These devices have demonstrated synaptic functions, such as short‐term plasticity (STP), paired‐pulse facilitation (PPF), long‐term plasticity (LTP), STP‐to‐LTP transition, and spike‐timing‐dependent plasticity by optical stimulation.…”

Section: Figurementioning

confidence: 99%

“…Recently, many types of neuromorphic devices have been proposed to emulate the highly efficient operations of a brain 5–17. Particularly, photonic synapse devices have received attention because they have several advantages compared to the electronic synapse devices, such as wide bandwidth, low crosstalk, and low power consumption characteristics 18–28. Therefore, researchers have attempted to mimic synaptic behaviors by utilizing optical stimulation and photonic synapse devices have been realized with various materials such as carbon nanotubes,29,30 oxide semiconductors,18,19,25,31,32 perovskite quantum dots,21,33 2D materials,23,24,27,28,34,35 and hybrid perovskites 20,26,36.…”

Section: Figurementioning

confidence: 99%

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Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

2020

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A number of synapse devices have been intensively studied for the neuromorphic system which is the next‐generation energy‐efficient computing method. Among these various types of synapse devices, photonic synapse devices recently attracted significant attention. In particular, the photonic synapse devices using persistent photoconductivity (PPC) phenomena in oxide semiconductors are receiving much attention due to the similarity between relaxation characteristics of PPC phenomena and Ca2+ dynamics of biological synapses. However, these devices have limitations in its controllability of the relaxation characteristics of PPC behaviors. To utilize the oxide semiconductor as photonic synapse devices, relaxation behavior needs to be accurately controlled. In this study, a photonic synapse device with controlled relaxation characteristics by using an oxide semiconductor and a ferroelectric layer is demonstrated. This device exploits the PPC characteristics to demonstrate synaptic functions including short‐term plasticity, paired‐pulse facilitation (PPF), and long‐term plasticity (LTP). The relaxation properties are controlled by the polarization of the ferroelectric layer, and this polarization is used to control the amount by which the conductance levels increase during PPF operation and to enhance LTP characteristics. This study provides an important step toward the development of photonic synapses with tunable synaptic functions.

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Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

2020

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“…[ 3 ] Recently, MAPbI 3 has shown great potential in developing memristors for information storage and neuromorphic computing applications. [ 4–10 ] Depending on whether the resistive‐switching (RS) is discrete or continuous, memristors can be classified into two types: digital‐ and analog‐type memristors. The former has been widely studied as nonvolatile memory, [ 5–9 ] which is often called resistance random access memory (RRAM), while the later has been proposed as an attractive candidate to emulate synaptic functions in biologically inspired neuromorphic systems.…”

Section: Introductionmentioning

confidence: 99%

Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors

Zhao

Wang

et al. 2020

Adv Funct Materials

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Organic-inorganic hybrid perovskite memristors with high resistiveswitching (RS) reliability and low power consumption are crucial for high-density storage and high-efficiency neuromorphic computing. However, the current overshoot in the electroforming process generally induces overgrowth of conductive filaments (CFs) and degrades the RS performance. Here, a simple photo-assisted electroforming (PAE) method to suppress the current overshoot, in which the visible light irradiation is introduced into the initial electroforming process, is proposed for the first time. As a result, a reliable memristor with reduced RS fluctuation and enhanced cycling endurance is obtained, and also, the low operating current of 0.06 mA and low powerconsumption of 0.12 mW are achieved, which are about one order of magnitude lower than those of most reported hybrid perovskite-based memristors. Further experimental evidence indicates that light irradiation plays dual roles: 1) the lightinduced lowering of iodide migration barrier leads to a significant reduction of overshoot current and forming voltage; 2) the enhanced local photoconductivity of the perovskite film shares the overshoot current through the CFs. Both factors limit the total quantity of vacancy defects generated in the electroforming process, thus preventing undesirable overgrowth of the CFs. The present PAE strategy has promise for developing high-performance memristors.

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“…First‐principles DFT calculations indicated significant differences in vacancy‐mediated migration activation energies for A‐site cations, thereby resulting in several differences in the performance of the three devices. Ham et al found that in the artificial synapses on the basis of the ITO/MAPbI 3 /Ag memristors, the threshold of the LTP decreased under light illumination, [ 83 ] because the produced photogenerated electric field had the same direction as the external electric field generated when a positive bias was applied to the Ag electrode. Meanwhile, under light illumination, the Schottky barrier formed at the MAPbI 3 /Ag interface also decreased due to the trapping of the photogenerated holes, which further promoted the charge transport.…”

Section: Halide Perovskite Memristor Applicationsmentioning

confidence: 99%

Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

Xiao

Tang

et al. 2020

Adv Materials Technologies

138

121

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The memristor is the fourth fundamental circuit element discovered after resistors, capacitors, and inductors. Although this concept has only been proposed in 1971 and confirmed in 2008, many materials with memristive properties have been found since 1962. Halide perovskites have been widely used in solar cells, and recently it has been found that they also possess good memristive properties. Different halide perovskites have been applied to memristors, including 3D organic–inorganic hybrid perovskites, 2D organic–inorganic hybrid perovskites, all‐inorganic cesium/rubidium lead halide perovskites, lead‐less and lead‐free perovskites, and halide perovskite quantum dots. Flexible and fiber‐shaped halide perovskite memristors have been fabricated. Several resistive switching mechanisms of halide perovskite memristors have been proposed, and the relationships between halide perovskite memristors and perovskite solar cells have been discussed. Based on halide perovskite memristors, light‐induced resistive switching and logic gate, high‐density and cross‐bar array data storage unit, and artificial synapse have been designed. Herein, recent advances in halide perovskite memristors are comprehensively and systematically reviewed. Finally, the current challenges and potential future directions in this field are discussed.

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Photonic Artificial Synapses: Photonic Organolead Halide Perovskite Artificial Synapse Capable of Accelerated Learning at Low Power Inspired by Dopamine‐Facilitated Synaptic Activity (Adv. Funct. Mater. 5/2019)

Cited by 47 publications

References 0 publications

Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors

Recent Advances in Halide Perovskite Memristors: Materials, Structures, Mechanisms, and Applications

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