Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

Abstract

International audienceAmorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality. © 2016, Tianjin University of Technology and Springer-Verlag Berlin Heidelberg

Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths

“…The lower phonon energy of selenide hosts warrants a low probability for multi-phonon relaxations between the energy levels of lanthanide ions. 27 The upper energy levels can be readily non-radiatively quenched by multi-phonon transitions. Therefore, the radiative transition probabilities and luminescence of the lanthanide ions are improved due to the reduced multi-phonon relaxations.…”