2009
DOI: 10.1038/nphoton.2009.001
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Photonic-chip-based radio-frequency spectrum analyser with terahertz bandwidth

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Cited by 42 publications
(68 citation statements)
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“…This raised the device insertion loss by a further ≈3 to 5 dB per facet for 4 and 2 μm wide ribs respectively, however, significant improvement is possible by incorporating on-chip tapers as reported for silicon [5]. Numerically calculated TM mode intensity profile for a 3 μm rib width as reported in [2] (d) Micrograph image of typical As 2 S 3 planar rib waveguide cross-section.…”
Section: Waveguide Characteristicsmentioning
confidence: 96%
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“…This raised the device insertion loss by a further ≈3 to 5 dB per facet for 4 and 2 μm wide ribs respectively, however, significant improvement is possible by incorporating on-chip tapers as reported for silicon [5]. Numerically calculated TM mode intensity profile for a 3 μm rib width as reported in [2] (d) Micrograph image of typical As 2 S 3 planar rib waveguide cross-section.…”
Section: Waveguide Characteristicsmentioning
confidence: 96%
“…While original experiments using HNF reported a bandwidth of ≈ 800 GHz [11], the use of the dispersionshifted ChG waveguide has demonstrated both a broader multi-terahertz measurement bandwidth and distortion free trace even for very short optical pulses [2]. Furthermore, "colorless" operation is achieved over a broader ranging signal wavelength.…”
Section: Broadband Rf Spectrum Analysismentioning
confidence: 99%
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“…Especially, a number of photonic approaches to microwave measurements, for instance, spectrum analysis [14][15][16][17], frequency estimation [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33], angle-of-arrival measurement [34][35], and DFS measurement [36][37][38][39], have been proposed recently. For DFS measurement, based on transversal filtering concept, a reconfigurable microwave photonic in-phase and quadrature detector is designed for DFS estimation in [36], wherein precise wavelength control is required.…”
Section: Introductionmentioning
confidence: 99%
“…Undoubtedly, during the last decade, semiconductor waveguides with strong nonlinear effects, such as the silicon and chalcogenide waveguide, have attracted tremendous attention [1,2], and have been considerably investigated and demonstrated to realize compactly optoelectronic devices for wavelength conversion [3,4], optical switching [5,6], modulation [7,8], and light propagation [9,10]. Compared to the significant previous reports, the passive GaAs semiconductor waveguide has stronger third order nonlinearity and 2-photon absorption coefficients [11,12] and so it can be considered another highly nonlinear medium, and has already been investigated in wavelength conversion, optical switching, and other potential applications [13][14][15][16].…”
Section: Introductionmentioning
confidence: 99%