Photonic‐Crafting of Non‐Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity

Abstract

Figure 3. Non-contact optical writing of the designed AFM pattern. a) Schematic of the designed pattern composed of the two distinct AFM configurations written by laser illumination. b) The XAS spectra mapping taken by measuring I A /I B , where the I A(B) is the intensity of the spectra taken at the energy A(B) for E//b as marked in Figure 3c and Figure 3d. c,d) The XAS polarization-dependent spectra for E//a and E//b taken at point 1 inside the word "BFO" (c) and at point 2 outside the word "BFO" (d)