Photonic crystal cavities in cubic (3C) polytype silicon carbide films

Radulaski, Marina; Babinec, Thomas M.; Buckley, Sonia; Rundquist, Armand; Provine, J.; Alassaad, Kassem; Ferro, Gabriel; Vučković, Jelena

doi:10.1364/oe.21.032623

Cited by 73 publications

(72 citation statements)

References 37 publications

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“…Q factors of > 10 9 have been simulated in these structures [32], with Q factors as high as 7.5 × 10 5 demonstrated on a Si platform [31]. Another advantage of 1D periodic structures is that they maintain a photonic band gap with lower index contrast than is possible for 2D planar photonic crystals, and therefore can still exhibit high Q factor modes on very low refractive index materials such as SiO 2 [33], diamond [34], Si 3 N 4 [35], sputter coated AlN [36] and SiC [37]. Moreover, in general a larger photonic band gap can be achieved in 1D than in 2D periodic structures, as one is only optimizing the band gap in one dimension.…”

Section: Introductionmentioning

confidence: 99%

Multimode nanobeam cavities for nonlinear optics: high quality resonances separated by an octave

Buckley¹,

Radulaski²,

Zhang³

et al. 2014

Opt. Express

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Section: Introductionmentioning

confidence: 99%

Multimode nanobeam cavities for nonlinear optics: high quality resonances separated by an octave

Buckley¹,

Radulaski²,

Zhang³

et al. 2014

Opt. Express

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“…More recently 3C-SiC polytype is used for better integration with Si photonics, by heteroepitaxial growth on sacrificial Si substrate, allowing for direct patterning without ion implantation damage. With this method, an L3 PhC cavity has been fabricated in a thin-film (200 nm) 3C-SiC slab, obtaining Q-factor of 1,000 and modal volume of 0.75(λ/n) 3 over the band between 1250 and 1600 nm in the telecom IR range [22]. The possibility to incorporate colour centres with optically addressable spins similar to NV centres in diamond has been shown by fabricating H1 and L3 PhC cavities in 300-nm-thick 3C-SiC, as shown in Figure 12, with experimental Q of 1,000 for the strongly coupled cavity and (λ/n) 3 mode volume, tuned to the zero phonon line of the Ky5 colour Advanced Silicon Carbide Devices and Processing Figure 11.…”

Section: Sic Photonics Cavitiesmentioning

confidence: 99%

“…We will review single-photon emission from nanostructures of silicon carbide [18,19]. We will review recent nanophotonics advances [20][21][22][23][24][25][26][27][28][29][30] in this material to achieve defect integration and enhancement. Other applications of the engineered defects in quantum technologies are also summarised.…”

Section: Introductionmentioning

confidence: 99%

Silicon Carbide for Novel Quantum Technology Devices

Castelletto¹,

Rosa²,

Johnson³

2015

Advanced Silicon Carbide Devices and Processing

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Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quantum measurements in this material such as single photon emission and optical spin control. The great advantage of SiC lies in its existing and well-developed device processing protocols and the possibilities to integrate these defects in a straightforward manner. There is particular current interest in nanomaterials and nanophotonics in SiC that could, once realised, introduce a new platform for quantum nanophotonics and in general for photonics. We will summarise SiC nanostructures exhibiting optical emission due to multiple polytypic bandgap engineering and deep defects. The combination of nanostructures and in-built paramagnetic defects in SiC could pave the way for future single-particle and single-defect quantum devices and related biomedical sensors with single-molecule sensitivity. We will review relevant classical devices in SiC (photonics crystal cavities, microdiscs) integrated with intrinsic defects. Finally, we will provide an outlook on future sensors that could arise from the integration of paramagnetic defects in SiC nanostructures and devices.Keywords: Silicon carbide deep defects, Paramagnetic properties, Optical-detected magnetic resonance, Single-photon sources IntroductionThe most common and technologically advanced SiC polytypes are 4H-SiC and 6H-SiC with hexagonal structures and 3C-SiC with a zinc-blende crystal structure (cubic). High-quality © 2015 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.bulk single-crystal 3C-SiC can be grown epitaxially on different substrates, most notably on silicon. This has led to many exciting devices fabricated with this particular polytype [1]. SiC has a wide bandgap (2.4-3.2 eV depending on the polytype), a high thermal conductivity, the ability to sustain high electric fields before breakdown and the highest maximum current density, making it ideal for high-power electronics [2]. More recently, it has become a notable material in the field of quantum computing and spintronics as several of its intrinsic defects are associated with an electron spin that can be used as quantum bit [3,4]. To enhance solid-state quantum systems scalability, a fully integrated device with quantum control should be built; thus, quantum systems should be part of the material used to fabricate the final device. Other solid-state quantum systems fully integrated into a functional device [5][6][7] operate at cryogenic temperatures (4 K or below),...

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“…Photonic bandgap (PBG) materials which are also known as PhCs, offer a medium of achieving strong photon confinement in volumes on the order of (λ/n) 3 , where λ is the photon wavelength and n is the refractive index of the host material [1][2][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Whispering Gallery Modes Formation in Small Nanocavities Based upon Crossed Nanobeam Structures

Daraei

Mohsenifard²,

Meibodi³

2014

AJOP

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Abstract:In this paper, we investigate conditions to form whispering gallery modes (WGMs) in small nanocavities (NCs) which are designed at the intersection area of couple of nanobeams (NBs) structures. Tapered air-holes at each branch of NBs have been employed as a part of mirror accompanied by curved-walls at cross junctions to form a small curved nanocavity. Simulations by finite element based commercial software, COMSOL Multiphysics 4.3 show that confined photonic modes are well established via WGM mechanism. Variation of modes wavelength and their field intensity profiles have been investigated. Quality factor, Q, as high as 198400 is obtained for a particular WGM at mode wavelength 1471.9 nm with computed modal volume as low as V mod ≈0.25(λ/n) 3 .

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Photonic crystal cavities in cubic (3C) polytype silicon carbide films

Cited by 73 publications

References 37 publications

Multimode nanobeam cavities for nonlinear optics: high quality resonances separated by an octave

Multimode nanobeam cavities for nonlinear optics: high quality resonances separated by an octave

Silicon Carbide for Novel Quantum Technology Devices

Whispering Gallery Modes Formation in Small Nanocavities Based upon Crossed Nanobeam Structures

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