Photophysical processes and the photodissociation of chemical bonds in polyatomic molecules

Plotnikov, V. G.; Смирнов, В. А.; Alfimov, M. V.

doi:10.1134/s0018143907030022

Cited by 13 publications

(7 citation statements)

References 81 publications

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“…1a, the boundary energy falls in the range from 3.06 eV (mercury line, 405 nm) to 3.4 eV (365 nm), which corresponds to the binding energy of most oxygen containing groups. The GO photoreduction can be thus described in the context of the photodissipation of multiatom aromatic molecules described in [19]. GO photoreduction sug gests the detachment of the OH, CO, and CO 2 (and possibly O or O 2 ) groups from electron excited states according to the dissipation mechanisms considered in [19].…”

Section: Resultsmentioning

confidence: 99%

Photoreduction of graphite oxide at different temperatures

et al. 2012

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The photoreduction of graphite oxide in a film exposed to UV light is investigated at 77 K and at room temperature. At a temperature of 77 K, the photodissociation of oxygen containing groups and graphite oxide (GO) reduction occurs that is observed in the UV vis and Raman absorption spectra. The mechanism of photoreduction is proposed, and a comparison of the photoreduction and the thermal process is carried out.

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Section: Resultsmentioning

confidence: 99%

Photoreduction of graphite oxide at different temperatures

et al. 2012

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“…However, the necessary transition of carriers from the localized photocatalytic areas in GO and H-Si substrate to OFGs is inefficient due to the inevitable recombination of carriers . In contrast, photochemical process can locally excite the electron transition at both C–O and CO, which can realize a higher efficiency in dissociating them directly . However, because the UV light source does not contain the wavelength at ca.…”

Section: Resultsmentioning

confidence: 99%

“…38 In contrast, photochemical process can locally excite the electron transition at both C−O and CO, which can realize a higher efficiency in dissociating them directly. 39 However, because the UV light source does not contain the wavelength at ca. 210 nm which is the absorption of the n−σ* transition, the UV photochemical dissociation is unlikely to happen on C−O, resulting in a relatively lower photoreduction efficiency.…”

Section: Scheme 1 Reactions Between H-si and Different Ofgsmentioning

confidence: 99%

Immobilization of Reduced Graphene Oxide on Hydrogen-Terminated Silicon Substrate as a Transparent Conductive Protector

Utsunomiya

Kokufu

et al. 2017

Langmuir

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Silicon is a promising electrode material for photoelectrochemical and photocatalytic reactions. However, the chemically active surface of silicon will be easily oxidized when exposed to the oxidation environment. We immobilized graphene oxide (GO) onto hydrogen-terminated silicon (H-Si) and reduced it through ultraviolet (UV) and vacuum-ultraviolet (VUV) irradiation. This acted as an ultrathin conductive layer to protect H-Si from oxidation. The elemental evolution of GO was studied by X-ray photoelectron spectroscopy, and it was found that GO was partially reduced soon after the deposition onto H-Si and further reduced after UV or VUV light irradiation. The VUV photoreduction demonstrated ca. 100 times higher efficiency compared to the UV reduction based on the irradiation dose. The saturated oxygen-to-carbon ratio (R) of the reduced graphene oxide (rGO) was 0.21 ± 0.01, which is lower than the photoreduction of GO on SiO substrate. This indicated the H-Si played an important role in assisting the photoreduction of GO. No obvious exfoliation of rGO was observed after sonicating the rGO-covered H-Si sample in water, which indicated rGO was immobilized on H-Si. The electrical conductivity of H-Si surface was maintained in the rGO-covered region while the exposed H-Si region became insulating, which was observed by conductive atomic force microscopy. The rGO was verified capable to protect the active H-Si against the oxidation under an ambient environment.

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“…OCG [34] . [20] [50] 和光热还原 [51] [63] , LIG工艺示意图以及图像如图3(a)和(b)所示. 而激光诱导聚合物柔性衬底改性原理性质较为复杂, 目前尚未掌握其详细的机制, 但其仍然是光热或光化学过程, 或者两者皆有 [64] [11] 报道了一种一步制造柔性图 2 (网络版彩图) (a) 激光还原CuO的实验装置示意图; (b) 激光还原CuO纳米油墨的工艺流程图, 通过光化学作用和光热作用将CuO纳米油墨转化为Cu膜 [53] .…”

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