2013
DOI: 10.1016/j.optmat.2013.05.001
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Photophysical properties of Alq3 thin films

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Cited by 59 publications
(14 citation statements)
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“…The saturation magnetizations are usually higher for the amorphous phase [39,42] of the material and an increasing of the grains size reduces the magnetization. The same phenomena enable the observation of the second order nonlinear effects [21,30,31,39], as they cause a lack of the inversion symmetry for amorphous phase of the mediums. The poor crystal quality of the films grown at low temperature can be greatly improved by annealing process applied after the deposition [30,31].…”
Section: Experimental Results Of Shgmentioning
confidence: 80%
See 1 more Smart Citation
“…The saturation magnetizations are usually higher for the amorphous phase [39,42] of the material and an increasing of the grains size reduces the magnetization. The same phenomena enable the observation of the second order nonlinear effects [21,30,31,39], as they cause a lack of the inversion symmetry for amorphous phase of the mediums. The poor crystal quality of the films grown at low temperature can be greatly improved by annealing process applied after the deposition [30,31].…”
Section: Experimental Results Of Shgmentioning
confidence: 80%
“…The refractive index and the thickness of the thin film were estimated from the transmission spectra using the following equation [21]:…”
Section: Transmittancementioning
confidence: 99%
“…Once stable nuclei are formed, they capture more atoms to form islands which will re-arrange themselves during the film formation to lower surface energy, provided there is enough surface diffusion to permit its to occur. The surface morphology of the deposited by PLD technique ZnO thin films was analyzed by Atomic Force Microscopy [14]. AFM imaging was performed in the contact mode, with an Agilent 5500 instrument equipped with a MSNL-D Bruker cantilever.…”
Section: Resultsmentioning
confidence: 99%
“…These spectra were measured at the excitation energy's density equal to 460 mJ/cm 2 . The time-resolved photoluminescence (TRPL) is a powerful, nondestructive technique commonly used for the optical characterization of the semiconductors Zielinski et al 1998;Zawadzka et al 2013a). This technique allows measuring the all emission bands' lifetime.…”
Section: Linear Optical Properties Of the Amorphous Mgo Thin Filmsmentioning
confidence: 99%