Optical upconversion via a multiphoton absorption process
converts
incoherent low-energy photons to shorter wavelengths. In this contribution,
we report a solid-state thin film for infrared-to-visible upconversion
composed of plasmonic/TiO2 interfaces. When excited at
λ = 800 nm, three photons are absorbed, leading to the excitation
of TiO2 trap states into an emissive state in the visible
domain. The plasmonic nanoparticle enhances the light absorption capabilities
of the semiconductor, increasing emission efficiency by 20 times.
We demonstrate that the plasmonic nanoparticle only changes the optical
absorption of the semiconductor; i.e., the process is purely photonic.
The process occurs in the ultrafast domain (<10 ps), contrasting
with molecular triplet–triplet exciton annihilation, the commonly
used method in photon upconversion, in the nano- to microsecond time
scales. The process utilizes pre-existing trap states within the semiconductor
bandgap and involves three-photon absorption.