2005
DOI: 10.1016/j.jssc.2005.03.017
|View full text |Cite
|
Sign up to set email alerts
|

Photophysics, photoelectrical properties and photoconductivity relaxation dynamics of quantum-sized bismuth(III) sulfide thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

4
42
1

Year Published

2006
2006
2024
2024

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 39 publications
(47 citation statements)
references
References 52 publications
4
42
1
Order By: Relevance
“…The values for θ and β obtained from the interpolation procedure were then used in Eq. (7). In order to take into account the influence of the instrumental factors on the broadening of XRD peaks, and therefore on the calculated average crystal radius, the following procedure was adopted.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…The values for θ and β obtained from the interpolation procedure were then used in Eq. (7). In order to take into account the influence of the instrumental factors on the broadening of XRD peaks, and therefore on the calculated average crystal radius, the following procedure was adopted.…”
Section: Resultsmentioning
confidence: 99%
“…In the case of both methods, standard microscope glasses were used as substrates. In order to improve the adhesion properties and to enable deposition of strongly adherent layers, prior to deposition the substrates were immersed in a diluted solution of tin(II) chloride (ω(SnCl 2 ) = 0.03%) for about twenty minutes and subsequently washed with deionized water and dried at ≈ (200-220) • C. As discussed in our previous studies [3][4][5][6][7][8], such pre-deposition treatment leads to formation of stochastically distributed small crystals of tin(II) oxide on substrate surface. These crystals act as nucleation centers during the deposition, initiating the heterogeneous nucleation processes.…”
Section: Experimental Techniques Employed For Conventional and Sonochmentioning
confidence: 99%
See 1 more Smart Citation
“…On the basis of solid-state theory of semiconductors [31,32], the temperature dependency of dark electrical resistance of a semiconductor with one or more impurity levels can be given by…”
Section: Electrical Measurementsmentioning
confidence: 99%
“…The band gap of BiOX is strictly dependent on the halide participated in its composition and ranges from 3.19-3.44, 2.64-2.91 and 1.77-1.92 eV, respectively for Cl, Br and I [2]. In this field, so far, researchers have also investigated photocatalytic activities of various bismuth compounds such as: Ag/AgI/BiOI [3], Bi2S3 [4], Bi2Ti2O7 [5], N-doped (BiO)2CO3 [6], Bi5O7NO3 [7], BiOI [8], Bi2O3, BiVO4, Bi2WO6 [9,10], BiNbO4 and BiTaO4 [11] and Black BiOCl [12]. Among different ternary bismuth based photocatalysts, bismuth oxyhalides (BiOX) have captivated the interest of researchers enormously.…”
Section: Introductionmentioning
confidence: 99%