Photoreflectance characterisation of Ar + ion etched and SiCI₄reactive ion etched silicon (100)

Estimation of defect generation probability in thin Si surface damaged layer during plasma processing

“…As the damage becomes more severe, the transition energy shifts toward to higher energy, i.e., a blue shift from the control is found. No apparent red shift reported by Murtagh et al [12] is seen. Based on the results by SE analysis, the origin of this energy shift is the structure change of IL.…”

“…With regard to the evaluation methods, both the electrical and structural analyses have been conducted so far. In the structural analysis, in addition to spectroscopic ellipsometry used in production lines, reflected high-energy diffraction [5,9], X-ray photoelectron spectroscopy [10], and photoreflectance spectroscopy [11][12][13] have been employed. In the electrical measurements, the current-voltage measurement with Schottky-contact test structures [7,9,11], sheet resistance measurement [8] and deep-level transient spectroscopy [14] have been performed to investigate the defects in devices.…”

Application of Molecular Dynamics Simulations to Plasma Etch Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors

“…In the present PRS, the amplitude of reflectance change (R/R) for the damaged sample was measured. A decrease in R/R means the defect generation in the surface region of Si substrate (< 10 nm) (Murtagh et al, 1997;Wada et al, 2000). Details for the basics of PRS analysis and experimental procedures were described elsewhere .…”

Micro-photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage on Si substrate

“…5,6) For this reason, it has become crucial to accurately measure PPD as the wafers are being processed (in situ) in the production line. [12][13][14] Since the first attempts in 1997, 15,16) a number of reports have focused on the usage of PRS to characterize the surfaces of semiconductor wafers bombarded with ions, [17][18][19][20] but PRS has not yet achieved wide use. 7) Photoreflectance spectroscopy (PRS) is one of such optical techniques, which has been used to understand the fundamental characteristics of semiconductor materials, [8][9][10] and to measure gate oxide charging damage 11) as well as strain/stress on the wafer.…”

“…7) Photoreflectance spectroscopy (PRS) is one of such optical techniques, which has been used to understand the fundamental characteristics of semiconductor materials, [8][9][10] and to measure gate oxide charging damage 11) as well as strain/stress on the wafer. [12][13][14] Since the first attempts in 1997, 15,16) a number of reports have focused on the usage of PRS to characterize the surfaces of semiconductor wafers bombarded with ions, [17][18][19][20] but PRS has not yet achieved wide use. One of the factors that have limited its applicability is the fact that, in traditional PRS setups, the spot sizes are on the order of 1 mm 2 , up to 1 cm 2 in some techniques.…”